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薄膜钛酸钡中的集成光子器件:机遇与挑战

Integrated Photonic Devices in Thin-Film Barium Titanate: Opportunities and Challenges

Hong-Lin Lin, Minghao Shang, Yuhui Yin, Wujie Fu, Luo Qi, Aaron J. Danner

arXiv 2609.16616首次发表:更新:

AI 中文总结

本文综述了薄膜钛酸钡集成光子器件,涵盖材料特性、生长集成、电光响应及应用,并讨论了挑战与未来方向。

AI 中文摘要

薄膜钛酸钡(BaTiO3,简称BTO)因其极高的Pockels系数、低光学损耗以及与异质集成的兼容性,已成为集成光子学中一种有前景的电光(EO)材料。最近在外延薄膜生长、晶体取向控制、铁电畴工程和可扩展集成方面的进展,使得薄膜BTO的电光性能在光子平台上接近体材料特性。本综述全面概述了基于薄膜BTO的集成光子器件,包括基本材料特性、薄膜生长与集成策略、无源波导配置、薄膜和器件层面的电光响应,以及相关光学应用。我们回顾了薄膜取向、畴结构和器件几何形状在决定可获得的电光系数和调制机制中的作用,以及薄膜和器件层面展示的内在和有效电光响应之间的区别。代表性研究在薄膜质量相关指标和器件性能品质因数方面进行了比较,同时介绍了在基于BTO的平台中实现的新兴应用。最后,我们讨论了剩余的挑战,并概述了面向高性能基于BTO的集成光子系统的未来发展方向。

英文摘要

Thin-film barium titanate (BaTiO3, or BTO) has emerged as a promising electro-optic (EO) material for integrated photonics due to its exceptionally large Pockels coefficients, low optical loss, and compatibility with heterogeneous integration. Recent advances in epitaxial thin-film growth, crystal orientation control, ferroelectric domain engineering, and scalable integration have enabled EO performance in thin-film BTO approaching bulk-like properties on photonic platforms. This review provides a comprehensive overview of integrated photonic devices based on thin-film BTO, including fundamental material properties, thin-film growth and integration strategies, passive waveguide configurations, EO response at both the film and device levels, and relevant optical applications. We review the role of film orientation, domain structure, and device geometry in determining accessible EO coefficients and modulation mechanisms, as well as the distinctions between intrinsic and effective EO responses demonstrated at the film and device levels. Representative studies are compared in terms of film-quality-related metrics and device performance figures of merit, alongside emerging applications realized in BTO-based platforms. Finally, we discuss the remaining challenges and outline future development directions toward high-performance BTO-based integrated photonic systems.

Journal refAppl. Phys. Rev. 13, 031330 (2026)

DOI:10.1063/5.0325359

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