发表机构
Eindhoven University of Technology（埃因霍温理工大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文展望二维材料在CMOS兼容量子硬件中的机遇与局限，探讨其原子级薄晶体和范德华界面如何应对制造带来的量子比特相干性挑战，并评估工艺转移的可行性。
AI 中文摘要
可制造性是开发固态量子处理器的若干约束之一，此外还有量子比特性能、控制、连接性、低温运行和容错能力。制造过程中引入的化学残留物、结构无序和非均匀界面可能损害量子比特的相干性。二维材料凭借其原子级薄晶体和范德华界面，为应对其中一些挑战提供了途径。它们作为下一代CMOS沟道材料的并行发展，促使人们审视相关工艺能否转移到量子芯片上。本展望评估了二维材料用于CMOS兼容量子硬件的机遇与局限。
英文摘要
Manufacturability is one of several constraints on developing solid-state quantum processors, along with qubit performance, control, connectivity, cryogenic operation, and fault tolerance. Chemical residues, structural disorder, and non-uniform interfaces introduced during fabrication can compromise qubit coherence. Two-dimensional (2D) materials, with their atomically thin crystals and van der Waals interfaces, offer routes to address some of these challenges. Their concurrent development as next-generation CMOS channel materials motivates an examination of whether relevant processes can be transferred to quantum chips. This Perspective evaluates the opportunities and limitations of 2D materials for CMOS-compatible quantum hardware.
