发表机构
Institute of Physics, Bhubaneswar; Homi Bhabha National Institute; Institute of Nano Science and Technology; Sambalpur University; University of Groningen; Chalmers University of Technology（印度物理研究所; 霍米·巴巴国立学院; 纳米科学与技术研究所; 桑巴尔普尔大学; 格罗宁根大学; 查尔姆斯理工大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出基于多铁性BiFeO3的自顺服无选择器忆阻交叉阵列，实现高良率、长耐久和4位多级操作，为可扩展内存计算提供可靠材料平台。
AI 中文摘要
内存计算要求无选择器操作、低变异性和稳定的多级切换，这些在单一系统中实现仍具挑战性。在此，我们展示了一种基于多铁性BiFeO3的稳健无选择器存储器，它结合了自顺服性与稳定的双极切换、高良率、长耐久性和延长保持时间。我们观察到，BiFeO3忆阻交叉阵列通过自然形成的TiOx界面层变得自顺服，从而实现无需外部选择器器件的无成形双极切换，解决了限制电阻式存储器实际部署的主要瓶颈。该阵列提供稳定的双极切换，器件良率达97%，耐久性超过10^5次循环，数据保持时间超过10^5秒，且循环间和器件间变异性低。此外，这些器件展现出16个分离良好的电导状态，通过精确脉冲控制编程实现4位多级操作，用于边缘应用中的数字可视化。噪声测量揭示主要为1/f型行为，随机电报噪声极小，表明在可编程窗口内电导稳定性强。这些结果确立了BiFeO3作为多比特、无选择器交叉存储器的实用材料平台，提供高可靠性，使其非常适合基于功能材料的可扩展计算架构。
英文摘要
In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.
