微转印蓝光InGaN激光器在氮化硅光子集成电路上的集成
Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits
- Ghent University（根特大学）
- imec
- Institute of High Pressure Physics Polish Academy of Sciences, PAS（波兰科学院高压物理研究所）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
针对氮化硅平台集成蓝光激光器的难题，采用微转印技术结合电化学蚀刻释放GaN薄膜，首次实现455 nm激射，电流密度超20 kA/cm²，为可见光集成光子学提供新方案。
AI中文摘要：
将集成光子学扩展到蓝色光谱范围需要高性能光源，这使得氮化镓（GaN）材料家族不可或缺。虽然氮化硅（SiN）平台为可见光波长提供了稳健的、兼容CMOS的无源生态系统，但无缝集成GaN激光器仍然是一个主要瓶颈。传统的异质集成方法存在明显的权衡：全晶圆键合可实现高吞吐量，但需要在大面积上仔细管理热失配和晶格失配；而倒装芯片键合通过预测试确保高良率，但受限于顺序处理速度。在此背景下，微转印（MTP）作为一种颠覆性的、材料高效利用的替代方案脱颖而出，通过结合高密度并行集成与已知良好芯片选择，绕过了这些限制。然而，将MTP应用于GaN面临重大材料挑战：由于其化学惰性和强III-N键，器件释放通常依赖电化学蚀刻，这可能损害材料质量。在此，我们克服了这一障碍，并展示了首个在SiN平台上的微转印蓝光激光器。利用重掺杂n型牺牲层和优化的电化学蚀刻条件，我们从块状GaN衬底上释放出表面光滑的薄膜光源。释放后，器件被集成并对接耦合到SiN叉形边缘耦合器，实现了超过20 kA/cm²的高电流密度以及455 nm波长的激射。这些结果扩展了可见光集成光子学工具包，并为多波长集成建立了框架，为流式细胞术、量子计算、光通信和增强/虚拟现实等下一代技术开辟了新途径。
英文摘要：
Expanding integrated photonics into the blue spectral range requires high-performance light sources, making the gallium nitride (GaN) material family indispensable. While silicon nitride (SiN) platforms offer a robust, CMOS compatible passive ecosystem for visible wavelengths, seamlessly integrating GaN lasers remains a major bottleneck. Conventional heterogeneous integration methods present distinct trade-offs: full-wafer bonding achieves high throughput but requires careful management of thermal and lattice mismatches across large areas, whereas flip-chip bonding ensures high yield through pretesting but is constrained by sequential processing speed. In this landscape, micro-transfer printing (MTP) emerges as a disruptive, material-efficient alternative, bypassing these limitations by combining high-density parallel integration with known-good-die selection. Applying MTP to GaN, however, presents a significant material challenge: due to its chemical inertness and strong III-N bonds, device release typically relies on electrochemical etching, which can compromise material quality. Here, we overcome this hurdle and demonstrate the first micro-transfer printed blue lasers on a SiN platform. Using a heavily doped n-type sacrificial layer together with optimized electrochemical etching conditions, we release smooth-surfaced thin-film light sources from bulk GaN substrates. Following release, the devices are integrated and butt-coupled to SiN fork-shaped edge couplers, achieving high current densities exceeding 20 kA$/$cm$^2$ alongside lasing at 455 nm. These results expand the visible integrated photonic toolkit and establish a framework for multi-wavelength integration, opening new avenues for next-generation technologies including flow cytometry, quantum computing, optical communications, and augmented/virtual reality.
