发表机构
Rzhanov Institute of Semiconductor Physics SB RAS; Herzen State Pedagogical University; Nikolaev Institute of Inorganic Chemistry SB RAS; Novosibirsk State Technical University（俄罗斯科学院西伯利亚分院半物理研究所; 赫尔岑国立师范大学; 俄罗斯科学院西伯利亚分院尼古拉耶夫无机化学研究所; 新西伯利亚国立技术大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文实验与模拟研究氧化铪的热刺激去极化，比较三种陷阱电离模型，发现孤立陷阱多声子电离机制与实验最吻合，电子和空穴陷阱热能量均约1.3 eV。
AI 中文摘要
本文对氧化铪中的热刺激去极化（TSD）进行了实验和理论研究。考虑了三种陷阱电离概率模型： Frenkel 效应，以及多声子陷阱电离机制的两种变体，即低陷阱浓度下孤立陷阱的多声子电离机制和高陷阱浓度下相邻陷阱间的声子辅助隧穿机制。TSD 实验与理论的最佳一致性出现在孤立陷阱的多声子电离机制中。得到 HfO2 中电子和空穴陷阱的相似热能量约为 1.3 eV。
英文摘要
This paper presents an experimental and theoretical study of thermally stimulated depolarization (TSD) in hafnium oxide. Three different models for the probability of trap ionization are considered: the Frenkel effect and two variants of the multiphonon trap ionization mechanism, the multiphonon ionization mechanism of isolated traps at low trap concentrations and phonon-assisted tunneling between neighboring traps at high trap concentrations. The best agreement between the TSD experiment and theory is observed for the multiphonon ionization mechanism of isolated traps. Similar thermal energies of electron and hole traps in HfO2 are obtained ~ 1.3 eV.
Comments13 pages, 5 figures
