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arXiv 2609.14777physics.optics

基于钽酸锂的亚千赫兹线宽集成扩展DBR Pockels激光器

Sub-kHz linewidth integrated extended-DBR Pockels lasers using lithium tantalate

Hugo Larocque, Zhuoya Yuan, Zihan Li, Giovanni Scarioni, Annika Schoels, Jiale Sun, Anat Siddharth, Xin Ou, Simone Bianconi, Tobias J. Kippenberg

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中文总结 AI 辅助

本文提出基于钽酸锂的扩展DBR Pockels集成激光器,实现24 Hz本征线宽、10 mW输出功率及与铌酸锂相当的调谐性能,并具备长期稳定性和批量生产潜力。

中文摘要 AI 辅助

可调谐低噪声激光器是现代计量学中至关重要的组件。光子集成电路技术的进步为紧凑型集成激光器提供了新平台,这些激光器具有大输出功率、快速频率调谐和窄线宽等特性。例如,铌酸锂扩展DBR激光器可实现数十毫瓦的输出功率、GHz级调谐范围和数百兆赫兹的调谐速率。然而,其他集成激光器设计中可实现的噪声水平仍然难以达到。在此,我们通过在钽酸锂中实现扩展DBR激光器来应对这一挑战,从而实现了低至24 Hz的本征线宽、10 mW的输出功率,其调谐特性与铌酸锂相当。该扩展DBR激光器采用现代封装解决方案组装,以提高其鲁棒性,并展示了长期稳定性,在19小时内自由运行频率漂移在232 MHz范围内。这些优势,加上钽酸锂适合批量生产的特点,有望显著扩大新一代广泛可调谐和低噪声集成激光器的可及性。

英文摘要

Tunable low-noise lasers are crucial components employed in modern metrology. Advances in photonic integrated circuit technology have provided a new platform for compact integrated lasers with large output powers, frequency-agile tuning, and narrow linewidths. For instance, lithium niobate extended-DBR lasers can yield output powers in the tens of mW, GHz-level tuning ranges, and tuning rates in the hundreds of MHz. However, noise levels achievable in other integrated laser designs remain challenging to reach. Here, we address this challenge by implementing extended-DBR lasers in lithium tantalate, thereby achieving intrinsic linewidths as low as 24 Hz, output powers of 10 mW, with tuning features on par with those of lithium niobate. The extended-DBR laser is assembled with modern packaging solutions to improve its robustness and demonstrate long-term stability with a free-running frequency drift within a range of 232 MHz over 19 hours. These benefits, in conjunction with lithium tantalate's suitability for volume manufacturing, promise to considerably expand accessibility to a new generation of widely tunable and low-noise integrated lasers.

发表机构

  • Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)(洛桑联邦理工学院物理研究所)
  • Deeplight SA(Deeplight公司)
  • State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(中国科学院上海微系统与信息技术研究所集成电路材料重点实验室)
  • Institute of Electrical and Micro engineering, Swiss Federal Institute of Technology, Lausanne (EPFL)(洛桑联邦理工学院电气与微电子工程研究所)

机构由 AI 辅助整理,请以论文原文为准。

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