AI 中文总结
本研究在无序多孔硅中发现近零反射，通过理论与实验验证了横向安德森局域化，并展示了孔径调控扩散长度（260纳米至2.4微米）的能力，为光子器件应用提供可控性。
AI 中文摘要
通过无序实现安德森类型的横向光局域化已成为引人入胜的基础课题。为此，我们发现，在无序多孔硅（PSi）中，可以观察到近乎“零反射”（从450纳米到900纳米）。基于自洽理论和随机亥姆霍兹方程对横向无序介质中传播的电场的求解，我们实验上可视化了局域长度随无序参数的变化并进行了计算，结果与实验合理吻合。基于这些针对不同孔径（在恒定有序参数下）的计算，扩散长度可以从260纳米变化到2.4微米，这体现了此类结构在光子器件中进一步应用的可控性。对有序PSi结构的反射进行了评估，结果显示其与无序PSi中观察到的响应没有相似之处。
英文摘要
Transverse light localization of Anderson type through disorders has made intriguing fundamental topics. Toward this, we found that in the disordered porous Si (PSi) a nearly "zero reflection" (from 450 to 900 nm) can be observed. The localization length versus disorder parameter is experimentally visualized and calculated based on a self consistent theory and solution of stochastic Helmholtz equation for electric fields traveling in a transverse disordered media with the results determined to be in a reasonable agreement with experiments. Based on these calculations for different pore diameters in a constant order parameter, diffusion length can vary from 260 nm to 2.4μm, accounting as controllability of such structure for further applications in photonic devices. Reflection from ordered PSi structure are evaluated that shows no similar responses to those seen in disordered PSi.
