具有高图案转移保真度的逆向设计纳米光子结构的通用套筒-体块制备方法
Versatile Sleeve-and-Bulk Fabrication of Inversely Designed Nanophotonic Structures with High Pattern Transfer Fidelity
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中文总结 AI 辅助
针对逆向设计纳米光子结构难以制造的问题，提出一种通用两步纳米制造工艺，在三种器件中实现超90%的图案转移保真度，无需器件特定优化。
中文摘要 AI 辅助
逆向设计是一种强大的计算工具，用于生成应优于传统设计对应物的纳米光子器件。然而，将这些理论优势转化为物理器件具有挑战性，因为使逆向设计结构如此有效的不规则且非直观的特征也使其极难制造，通常需要对每个器件设计进行大量独特的工艺优化。我们描述了一种通用的两步纳米制造工艺，该工艺在三种不同的逆向器件设计中均实现了超过90%的图案转移保真度，且无需针对器件的工艺优化。
英文摘要
Inverse design is a powerful computational tool for generating nanophotonic devices that should outperform their traditionally designed counterparts. However, translating these theoretical gains into physical devices is challenging because the irregular and non-intuitive features that make inversely designed structures so effective also make them exceptionally difficult to fabricate, typically necessitating substantial process optimization unique to each device design. We describe a versatile two-step nanofabrication process that achieves pattern transfer fidelity in excess of 90% for each of three distinct inverse device designs with no device-specific process optimization.
发表机构
- University of Delaware（特拉华大学）
- West Virginia University（西弗吉尼亚大学）
机构由 AI 辅助整理，请以论文原文为准。
