发表机构
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V.; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research（柏林莱布尼茨固体电子学保罗·德鲁德研究所; 德累斯顿-罗斯多夫亥姆霍兹中心离子束物理与材料研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究揭示了AlN薄膜中局域发光体的形成效率强烈依赖生长条件，N-rich条件下经质子辐照和退火处理可高效形成具有零声子线的发光体，为量子光源集成提供新途径。
AI 中文摘要
AlN因其宽透明窗口、与CMOS技术的兼容性以及能够容纳作为单光子源的局域发光体，成为集成量子光子学中一种有前景的材料。然而，关于这些发光体的微观性质和形成机制，目前仍知之甚少。在本研究中，我们证明了它们的形成效率显著依赖于AlN薄膜的生长条件。我们揭示，在N-rich条件下生长的外延AlN薄膜，经过由质子辐照和随后的退火过程组成的生长后处理后，可以高效形成在600–800 nm范围内具有明显零声子线的局域发光体。相比之下，在Al-rich条件下生长的AlN中形成的发光体密度仍然很低，即使薄膜经过生长后处理也是如此。这些结果为更好地理解这些发光中心的微观性质，以及它们在基于AlN的光机平台上作为量子光源的工程化集成开辟了道路。
英文摘要
AlN is a promising material for integrated quantum photonics due to its broad transparency window, its compatibility with CMOS technology, and the possibility to host localized light emitters acting as single photon sources. However, little is understood yet about the microscopic nature and formation mechanisms of these light emitters. In this contribution, we demonstrate that their formation efficiency depends significantly on the growth conditions of the AlN thin film. We reveal that localized light emitters with distinct zero-phonon lines in the 600--800~nm range can be efficiently formed in epitaxial AlN thin films grown under N-rich conditions by exposing the AlN to a post-growth treatment consisting in a proton irradiation followed by an annealing process. In contrast, the density of light emitters formed in AlN grown under Al-rich conditions remains low, even after the thin films have been exposed to the post-growth treatment. These results open a pathway toward a better understanding of the microscopic nature of these light emission centers, as well as their engineered integration as quantum light sources in AlN-based optomechanical platforms.
