单晶硅裂纹扩展阈值：解理面-裂纹子模型

中文摘要 AI 辅助

实验揭示了裂纹速度对裂纹驱动力的依赖关系中存在不连续性。尽管付出了巨大努力，但迄今为止，先前的理论方法，如线弹性断裂力学和分子动力学计算，未能阐明速度间隙的问题。在此，提出了用于裂纹扩展的解理面-裂纹子模型。硅的归一化裂纹扩展速度与量子数的四分之一次方成正比。该运动方程与硅的实验结果一致。它阐明了长期存在的速度间隙问题的潜在机制。已建立量子数与裂纹表面粗糙度之间的关系。已确定单晶硅中不稳定裂纹扩展起始的临界量子数。已发现临界量子数与断裂韧性之间的对应关系。该方法为断裂过程的潜在机制提供了见解。它不限于硅，可扩展到其他晶体材料，以理解和预测断裂行为。

英文摘要

Experiments revealed the discontinuities in the dependence of the crack speeds on the crack driving force. Despite great efforts, until now, previous theoretical methods, such as linear elastic fracture mechanics and molecular dynamics calculations, failed to elucidate the issue of speed gap. Herein, the cleavage plane-crackons model for crack propagation has been proposed. The normalized crack propagation speed of silicon is proportional to the one-fourth power of the quantum numbers. This motion equation is consistent with experimental results of silicon. It clarifies the underlying mechanism of the long-standing issue of the speed gap. The relationship between quantum numbers and the roughness of the surface of the cracks has been established. The critical quantum number for the onset of unstable crack propagation in single-crystal silicon has been determined. The correspondence between the critical quantum number and fracture toughness has been discovered. This methodology lead to insights into the underlying mechanism of the fracture processes. It is not limited to silicon and can be extended to other crystalline material to understand and predict the fracture behaviors.

发表机构

• State Key Laboratory of Bio-based Fiber Materials, Tianjin University of Science and Technology（天津科技大学生物基纤维材料国家重点实验室）

机构由 AI 辅助整理，请以论文原文为准。