低于一开尔文的低温晶圆探针测试：正常金属库仑阻塞温度计在晶圆尺度上的表征
Cryogenic wafer probing below one Kelvin: Characterization of normal-metal Coulomb blockade thermometers at wafer scale
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中文总结 AI 辅助
针对低温器件表征效率低的问题，本文利用库仑阻塞温度计在300毫米探针台上实现了150毫米晶圆低于700毫开尔文的晶圆级低温表征，验证了亚开尔文晶圆测试的可行性，为量子器件高通量筛选开辟了道路。
中文摘要 AI 辅助
近年来，随着亚开尔文温度测量需求的增加，特别是由于稀释制冷机在量子技术研究和应用中的普及，库仑阻塞温度计（CBTs）引起了越来越多的关注。CBTs既可作为初级温度计运行，无需事先校准，也可在校准后作为次级模式下的简单电阻温度计使用。随着用于量子器件和低温电子学的可扩展制造工艺的发展，低温晶圆表征方法也必须扩大规模，以提供器件参数的统计数据。目前，低温器件的表征吞吐量受到传统低温恒温器周转时间和样品容量的限制，仅测量几个器件的一个周期就可能需要数天。在本工作中，我们利用CBTs展示了最近开发的TiW/Al-AlOx/TiW正常金属隧道结技术的晶圆级低温表征。在300毫米低温晶圆探针台（CWP）中进行的测量显示，整个150毫米晶圆上的片上电子温度低于700毫开尔文，这是通过初级测温法确定的。这些结果确立了低于1K的晶圆级测试作为电气器件大规模低温表征的可行方法，为量子器件的高通量筛选和基于铝的超导电路的直接晶圆级表征开辟了道路。
英文摘要
Coulomb blockade thermometers (CBTs) have attracted more interest in recent years, as the demand for sub-one Kelvin thermometry has increased, especially due to the prevalence of dilution refrigerators in research and applications in quantum technology. CBTs can be operated both as a primary thermometer, requiring no prior calibration, or as a simple resistance thermometer in the secondary mode after calibration. As new scalable fabrication processes for quantum devices and cryogenic electronics are being developed, cryogenic wafer characterization methods must also scale up to provide statistical data on device parameters. Currently, characterization throughput of cryogenic devices is limited by the turnover time and sample capacity of traditional cryostats, where a measurement cycle for only a few devices can take several days. In this work, we demonstrate wafer-scale cryogenic characterization of a recently developed TiW/Al-AlOx/TiW normal-metal tunnel junction technology using CBTs. Measurements performed in a 300 mm cryogenic wafer prober (CWP) show on-chip electron temperatures below 700 mK across a full 150 mm wafer, as determined by primary thermometry. These results establish wafer-level testing below 1 K as a viable approach for large-scale cryogenic characterization of electrical devices, opening a pathway toward high-throughput screening of quantum devices and direct wafer-scale characterization of aluminum-based superconducting circuits.
发表机构
- VTT Technical Research Centre of Finland Ltd（芬兰技术研究中心有限公司）
- Bluefors Oy（Bluefors有限公司）
- AEM Afore Oy（AEM Afore有限公司）
- SemiQon Oy（SemiQon有限公司）
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