通过低每周期生长量增强原子层沉积的保形性

中文摘要 AI 辅助

原子层沉积（ALD）是先进微电子学的关键使能技术，因为它能够在复杂三维基底上以无与伦比的原子级精度生长功能性薄膜。在高深宽比（HAR）结构中，保形薄膜生长受到反应物分子向深窄特征内缓慢扩散的限制。本研究通过建模和实验，探究ALD每周期生长量（GPC）与HAR结构中薄膜穿透深度之间的关系，阐明了一种更快生长保形薄膜的方法。扩散-反应模拟揭示，在Knudsen扩散条件下，薄膜穿透深度与GPC之间存在平方根反比关系。该预测通过模型氧化锌ALD工艺在矩形横向HAR结构上的实验得到验证，实验中利用抑制剂分子降低GPC。虽然ALD传统上以“高GPC”为优化目标，但本工作表明，当保形性为关键时，“低GPC”可能提高效率。

英文摘要

Atomic layer deposition (ALD) is a key enabling technology for advanced microelectronics as it enables the growth of functional thin films on complex three-dimensional substrates with unmatched atomic-scale precision. Conformal film growth in high-aspect-ratio (HAR) structures is limited by slow diffusion of reactant molecules into deep, narrow features. This work elucidates an approach to grow conformal films faster by investigating the relationship between the ALD growth per cycle (GPC) and the film penetration depth in HAR structures through modeling and experiments. Diffusion-reaction simulations reveal, under Knudsen diffusion conditions, an inverse square root relationship between the film penetration depth and GPC. The prediction is validated experimentally with a model zinc oxide ALD process on rectangular lateral HAR structures, using an inhibitor molecule to decrease the GPC. While ALD is traditionally optimized for "high GPC," this work shows that "low GPC" may increase efficiency when conformality is key.

发表机构

• Aalto University（阿尔托大学）

机构由 AI 辅助整理，请以论文原文为准。