hBN缺陷工程中空位产生与填充的竞争
Competition between vacancy creation and filling in defect-engineering of hBN
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中文总结 AI 辅助
本研究通过超低能Ar+离子辐照单层hBN，发现空位产生以硼单空位为主，且Si和C杂质填充空位作用显著，影响量子发射体的选择性制备。
中文摘要 AI 辅助
六方氮化硼（hBN）近来作为一种可容纳量子发射体的材料而成为深入研究的热点。已知这种发射与点缺陷有关，但为了将特定缺陷与其光谱明确关联起来，需要控制缺陷产生机制。在此，我们制备了自支撑的单层hBN样品，并用超低能（150 eV）Ar+离子对其进行辐照。通过扫描透射电子显微镜对辐照前后的样品进行表征，以评估缺陷密度和分布。与分析势分子动力学模拟的预测相反，我们在离子辐照后主要观察到硼单空位，其次是数量为其一半的双空位。此外，我们还观察到，Si和C杂质原子对空位的填充在所产生缺陷中扮演的角色比先前假设的更为重要，这可能对在hBN中选择性产生量子发射体构成问题。
英文摘要
Hexagonal boron nitride (hBN) has recently become the focus of intense research as a material that can host quantum emitters. It is known that such emission is related to point defects, but in order to conclusively correlate specific defects to their spectra, having control over the defect creation mechanism is required. Here, we prepare freestanding, monolayer hBN samples and irradiate them with ultra-low-energy (150 eV) Ar+ ions. The samples are characterized before and after irradiation via scanning transmission electron microscopy to assess the defect density and distribution. Contrary to what analytical potential molecular dynamics simulations have predicted, we predominantly observe boron single vacancies after ion irradiation, followed by double vacancies at half the count. Moreover, we also observe that vacancy filling with Si and C impurity atoms plays a more significant role in the created defects than previously assumed, potentially posing a problem for selective creation of quantum emitters in hBN.
发表机构
- University of Vienna（维也纳大学）
- Univ. Paris-Saclay, CNRS, Laboratoire de Physique des Solides（巴黎萨克雷大学，法国国家科学研究中心，固体物理实验室）
- Institute for Microelectronics, TU Wien（TU维也纳微电子研究所）
机构由 AI 辅助整理，请以论文原文为准。
