发表机构
Institute of Micro/Nano Electromechanical System and Integrated Circuit, College of Mechanical Engineering, Donghua University; School of Information Science and Electronic Engineering, Shanghai Jiao Tong University; State Key Laboratory of Fabrication Technologies for Integrated Circuits, IMECAS（东华大学机械工程学院微纳机电系统与集成电路研究所; 上海交通大学信息科学与工程学院; 中国科学院微电子研究所集成制造技术重点实验室）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过原子层沉积制备高性能p型SnOx晶体管，实现6.9 cm²/Vs迁移率及80 nm沟道下38.7 mA/mm开态电流，并成功集成CFET，证明其作为后端p型器件的潜力。
AI 中文摘要
高性能p型氧化物半导体的开发对于实现单片三维集成的互补逻辑至关重要，然而p型氧化物半导体的性能仍远逊于n型对应物。在本工作中，我们通过原子层沉积（ALD）展示了高性能p型SnOx晶体管，作为单片三维集成的后端兼容器件。SnOx晶体管展现出6.9 cm²/Vs的高场效应迁移率、185 mV/dec的低亚阈值摆幅（SS）、1.8×10⁴的良好开关比（ION/IOFF）以及高偏压稳定性。将沟道长度缩小至80 nm时，在VDS为-1 V下实现了38.7 mA/mm的高开态电流。我们理解到，通过前驱体和反应工程抑制SnOx薄膜中的Sn⁴⁺组分是性能提升的关键。此外，我们还展示了将ALD SnOx p-FET垂直堆叠在ALD In2O3 n-FET上的互补场效应晶体管，在VDD为4 V时实现了21 V/V的最大电压增益。这些发现表明，ALD SnOx是用于规模化高性能后端p型晶体管的有前景的候选材料。
英文摘要
The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.
