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通过单线态裂变实现效率超过30%的硅太阳能电池设计

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Shona McNab, Phoebe Pearce, Pietro P. Altermatt, Jingnan Tong, Ruy Sebastian Bonilla, Timothy W. Schmidt, Murad J. Y. Tayebjee, Bram Hoex, Alison Ciesla, Michael P. Nielsen, Nicholas J. Ekins Daukes

arXiv 2609.10979首次发表:更新:

发表机构

University of New South Wales; Trina Solar; Department of Materials, University of Oxford; School of Photovoltaic and Renewable Energy Engineering, University of New South Wales; State Key Laboratory for Photovoltaic Science and Technology (SKL PVST); School of Chemistry, University of New South Wales(新南威尔士大学; 天合光能; 牛津大学材料系; 新南威尔士大学光伏与可再生能源工程学院; 光伏科学与技术国家重点实验室; 新南威尔士大学化学学院)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究通过耦合光学与电学模拟,评估了单线态裂变材料与工业硅电池架构结合的效率潜力,发现交叉背接触电池可超33%效率,并指出表面钝化及设计优化是关键。

AI 中文摘要

单线态裂变(SF)材料能将高能光子转化为多个电荷载流子,为超越单结硅太阳能电池的效率极限提供了一条途径,且无需多结叠层设计的许多复杂性。在2025年首次演示了SF增强型硅太阳能电池之后,有必要理解如何将SF材料有效集成到高效率的工业硅器件中,并将其从概念验证转化为可制造的技术。通过耦合光学和电学模拟,我们评估了几种与SF材料结合的工业相关硅电池架构的效率潜力。交叉背接触(IBC)电池由于前表面无限制接触而具有最大的改进潜力,可实现超过33%的效率。然而,性能对前表面钝化质量高度敏感。适当的硅设计,特别是受控的表面掺杂和固定的界面电荷,可以减轻复合损失并放宽超薄激子传输层的钝化要求。

英文摘要

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

论文原文

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