利用邻近效应校正定量降低光机械晶体制造误差
Quantitative Fabrication-Error Reduction in Optomechanical Crystal using Proximity Error Correction
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中文总结 AI 辅助
本文利用邻近效应校正技术，通过蒙特卡洛模拟和剂量修改方案，显著提升了光子晶体结构的制造保真度，降低了尺寸偏差和边缘粗糙度，并大幅提高了光学品质因子。
中文摘要 AI 辅助
我们展示了在电子束光刻（EBL）中使用邻近效应校正（PEC）来提高高密度光子晶体结构的制造保真度。采用蒙特卡洛模拟来模拟电子散射，并确定抗蚀剂-衬底系统的邻近函数。在此基础上，实施了一种计算剂量修改方案，以补偿曝光过程中的非均匀能量沉积。此外，进行了基于扫描电子显微镜（SEM）的图像分析，通过将提取的几何形状与参考GDS设计进行比较，定量评估均匀曝光、手动剂量修改和PEC制造的器件之间的结构差异。分析显示，在PEC校正的结构中，尺寸偏差减小，空间均匀性提高，边缘粗糙度降低。这些改进使得制造的光子晶体腔中的光学品质因子显著提高。
英文摘要
We demonstrate the use of proximity effect correction (PEC) in electron beam lithography (EBL) to improve the fabrication fidelity of dense photonic crystal structures. Monte Carlo simulations were employed to model electron scattering and determine the proximity function of the resist-substrate system. Based on this, a computational dose-modification scheme was implemented to compensate for nonuniform energy deposition during exposure. In addition, SEM-based image analysis was performed to quantitatively assess structural differences among uniformly exposed, manually dose-modified, and PEC-fabricated devices by comparing extracted geometries with the reference GDS design. The analysis revealed reduced dimensional deviation, improved spatial uniformity, and lower edge roughness in the PEC-corrected structures. These improvements resulted in a significantly enhanced optical quality factor in the fabricated photonic crystal cavities.
发表机构
- Indian Institute of Science（印度科学学院）
- Tata Institute of Fundamental Research（塔塔基础研究所）
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