GaAs Corbino几何结构中的流体动力学磁输运
Hydrodynamic magnetotransport in a GaAs Corbino geometry
- Instituto de Física da Universidade de São Paulo（圣保罗大学物理研究所）
- Institute of Semiconductor Physics（半导体物理研究所）
- Novosibirsk State University（新西伯利亚国立大学）
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中文总结 AI 辅助
本文报道GaAs Corbino器件中的正磁电阻，通过流体动力学理论分析，证明其可作为探测黏性电子流的体敏感探针。
中文摘要 AI 辅助
我们报道了在高迁移率GaAs Corbino器件中观测到的正磁电阻现象。在较宽的中间温度范围内，电阻对垂直磁场表现出二次依赖关系。我们在Corbino几何结构的磁输运流体动力学理论框架内分析数据，该理论描述了扩散区与黏性区之间的交叉，并包含了适用于电流可穿透接触的有限滑移边界条件。提取的弛豫率与电子-电子散射贡献的约$T^2$温度依赖关系一致。提取的黏性弛豫参数与从Hall bar测量获得的结果一致。与理论比较表明，观测到的磁电阻主要由体流体动力学响应主导，而有限滑移定量地修正了Stokes-Ohm交叉，且与场相关的边界电压提供了单独的修正。这些结果表明，Corbino磁输运可以作为黏性电子流的互补体敏感探针。
英文摘要
We report the observation of positive magnetoresistance in high-mobility GaAs Corbino devices. Over a broad intermediate-temperature range, the resistance exhibits a quadratic dependence on perpendicular magnetic field. We analyze the data within hydrodynamic theories of magnetotransport in the Corbino geometry, which describe the crossover between the diffusive and viscous regimes, including finite-slip boundary conditions appropriate for current-penetrable contacts. The extracted relaxation rates are consistent with an approximately $T^2$ temperature dependence of the electron-electron scattering contribution. The extracted viscous relaxation parameters are consistent with those obtained from Hall-bar measurements. Comparison with theory indicates that the observed magnetoresistance is predominantly governed by the bulk hydrodynamic response, while finite slip modifies the Stokes--Ohm crossover quantitatively and the field-dependent boundary voltage provides a separate correction. These results show that Corbino magnetotransport can serve as a complementary bulk-sensitive probe of viscous electron flow.
