工业碳化硅中远程硅空位中心的电可调双光子干涉
Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide
- Friedrich-Alexander-Universität Erlangen-Nürnberg（埃尔朗根-纽伦堡大学）
- Fraunhofer Institute of Integrated Systems and Device Technology (IISB)（弗劳恩霍夫集成系统和器件研究所）
- Leibniz-Institut für Oberflächenmodifizierung e.V.（莱布尼茨表面改性研究所）
- Luxembourg Institute of Science and Technology (LIST)（卢森堡科学与技术研究所）
- University of Luxembourg（卢森堡大学）
- University of Stuttgart（斯图加特大学）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究利用工业碳化硅中电可调硅空位色心，通过电压控制实现光谱稳定，展示了远程节点间高可见度双光子干涉，为分布式量子网络提供可扩展方案。
AI中文摘要：
分布式量子网络依赖于空间分离、独立操作的量子系统作为网络节点，这些系统发射的光子必须以高可见度进行干涉，以建立端到端的纠缠。至关重要的是，对于网络相关应用，必须在长时间尺度上实现高可见度，以减少纠错开销并提高网络速率。在此，我们实验证明碳化硅（SiC）中的硅空位（$\mathrm{V_{Si}}$）色心能够满足这些要求，尤其以可大规模部署的方式实现。我们将$\mathrm{V_{Si}}$中心集成到不同的工业级SiC p-i-n二极管中，并通过电压偏置进行控制。通过这种方式，我们展示了不同二极管中19个随机选择的$\mathrm{V_{Si}}$中心的光谱重叠，以及接近寿命极限的光谱窄化，即通常低于60 MHz。值得注意的是，这些性能参数具有长期稳定性，例如，仅需每8.4小时重新调整p-i-n二极管偏置，这显著降低了整体实验开销。随后，我们利用这些优势，展示了位于两个不同低温恒温器装置中、空间相隔两米的$\mathrm{V_{Si}}$中心之间的高质量双光子干涉。值得注意的是，我们进行了为期26天的测量活动，展示了具有最先进原始干涉可见度82%的双光子干涉，这与当前最先进水平一致。这些结果确立了工业级SiC器件中的$\mathrm{V_{Si}}$中心作为分布式量子网络的可扩展、光谱稳定的构建模块。
英文摘要：
Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to establish end-to-end entanglement. Crucially, for network-relevant applications, high visibilities must be achieved over prolonged timescales to reduce overheads for error correction, and to increase network rates. Here, we demonstrate experimentally that silicon vacancy $\mathrm{V_{Si}}$ color centers in silicon carbide (SiC) achieve these requirements, notably in a mass-deployable fashion. We integrate $\mathrm{V_{Si}}$ centers in different industrial-grade SiC p-i-n diodes, which are controlled via voltage biassing. This way, we demonstrate both, spectral overlapping of 19 randomly selected $\mathrm{V_{Si}}$ centers in different diodes, as well as spectral narrowing close to the lifetime limit, i.e., typically below 60 MHz. Notably, these performance parameters are long-term stable, e.g., readjusting the p-i-n diode bias is required only every 8.4 hours, which reduces significantly the overall experimental overhead. We then use these assets to demonstrate high-quality two-photon interference between $\mathrm{V_{Si}}$ centers located in two different cryostat setups, which are spatially separated by two meters. Notably, we perform a 26-days long measurement campaign, demonstrating two-photon interference with state-of-the-art raw interference visibilities of 82%, which aligns with the current state-of-the-art. These results establish $\mathrm{V_{Si}}$ centers in industry-grade SiC devices as a scalable, spectrally stable building block for distributed quantum networks.
