发表机构
University of Technology Sydney; The University of Hong Kong; National Institute for Materials Science; University of Southern Queensland（悉尼科技大学; 香港大学; 国立材料研究所; 南昆士兰大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出一种简便的双层全干法转移技术，在hBN薄片间创建重叠区域，使量子发射体密度提升15倍且保持优异光学性能，为可扩展量子光子平台提供实用集成途径。
AI 中文摘要
二维材料中的量子发射体，尤其是六方氮化硼（hBN），是量子技术的有前景平台。然而，在预定位置实现高密度发射体同时保持光学质量仍然具有挑战性。在此，我们介绍一种简便、成本效益高的双层全干法转移方法，以确定性方式在hBN薄片之间创建重叠区域。这些预定义的覆盖区域表现出显著增强的发射体密度，与未覆盖区域相比，最多可增加15倍。重要的是，该方法不会损害发射体质量：重叠区域内的发射体表现出优异的光学性能，包括高信号背景比和信噪比、大的德拜-沃勒因子、高亮度和强光谱稳定性。还讨论了可能的缺陷构型，以将观察到的发射特性置于背景中。这种可扩展策略能够在目标区域优先形成量子发射体，实现比简单处理（如等离子体辐照）更高的密度，同时避免先进制造技术的复杂性。该方法为将高质量量子发射体集成到可扩展量子光子平台提供了实用途径。
英文摘要
Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.
