发表机构
CREOL, The College of Optics and Photonics, University of Central Florida; Department of Materials Science and Engineering, University of Central Florida（中佛罗里达大学光学与光子学院; 中佛罗里达大学材料科学与工程系）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过分子束外延在InP衬底上生长PbSe薄膜，利用晶格匹配的III-V缓冲层将失配限制在4%，实现了高质量外延并增强了光致发光，为红外探测提供了新平台。
AI 中文摘要
探测器成本仍然是中波红外（3-5微米）技术广泛采用的一个障碍。PbSe是一种廉价的窄带隙IV-VI族半导体，自20世纪40年代初就被使用，尽管多晶薄膜中存在大量晶界，它仍能提供高性能的红外探测。然而，外延生长可以提供更优异的晶体质量和界面，但适合PbSe的衬底仍然有限。最近的PbSe异质外延主要集中在III-V族、II-VI族和IV族衬底上，这些衬底各自为异质结构工程提供了相对较窄的晶格匹配合金范围。在这里，我们展示了基于InP的异质外延能够进入更广泛的材料平台，同时将PbSe的晶格失配限制在约4%。我们通过分子束外延在（001）InP衬底上的200纳米厚的In0.53Ga0.47As和In0.52Al0.48As缓冲层上生长了150纳米厚的PbSe薄膜。反射高能电子衍射和X射线衍射显示，在两种缓冲层上均获得了（001）取向的岩盐结构PbSe，其面外晶格常数为6.12埃。在从室温到12 K的温度范围内观察到光致发光（PL），峰值波长从3.7微米红移到5.0微米。在相同的测量条件下，生长在In0.53Ga0.47As和In0.52Al0.48As上的薄膜的室温峰值PL强度分别约为PbSe在GaAs衬底上参考样品的1.9倍和1.3倍。这些结果建立了一个与InP兼容的平台，用于将窄带隙PbSe与广泛的三元和四元III-V合金集成，例如，包括In0.53Ga0.47As既作为短波红外吸收器又作为PbSe生长模板的结构。
英文摘要
Detector cost remains a barrier to the widespread adoption of mid-wave infrared (3-5 micron) technology. PbSe, an inexpensive narrow band gap IV-VI semiconductor that has been used since the early 1940s, delivers high performance for infrared detection despite the abundance of grain boundaries in polycrystalline films. Epitaxial growth, however, could provide superior crystalline quality and interfaces, but suitable substrates remain limited for PbSe. Recent PbSe heteroepitaxy has focused primarily on III-V, II-VI and group-IV substrates that each offer a comparatively narrow range of lattice-matched alloys for heterostructure engineering. Here we show that InP-based heteroepitaxy provides access to a broader materials platform while limiting the lattice mismatch with PbSe to approximately 4%. We grow 150-nm thick PbSe films by molecular beam epitaxy on 200-nm thick In0.53Ga0.47As and In0.52Al0.48As buffers on (001) InP substrates. Reflection high-energy electron diffraction and X-ray diffraction show (001)-oriented rock-salt PbSe with an out-of-plane lattice constant of 6.12 Angstrom on both buffers. Photoluminescence (PL) is observed from room-temperature down to 12 K and the peak wavelength red-shifts from 3.7 to 5.0 microns. Under identical measurement conditions, the room-temperature peak PL intensities from films on In0.53Ga0.47As and In0.52Al0.48As are approximately 1.9x and 1.3x that of a PbSe on GaAs substrate reference, respectively. These results establish an InP-compatible platform for integrating narrow band-gap PbSe with a broad range of ternary and quaternary III-V alloys, including, for example, structures in which In0.53Ga0.47As serves as both a short-wave infrared absorber and a template for PbSe growth.
