发表机构
Indian Institute of Technology Kanpur（坎普尔印度理工学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究在NbSe2中利用Fe3GeTe2的磁邻近效应实现无结、高效且极性可调的超导二极管，并演示了XNOR逻辑门运算，为节能逻辑电路提供新途径。
AI 中文摘要
超导二极管效应（SDE）的实现以非互易超电流为特征，是迈向无耗散逻辑电路的重要一步。具有高二极管效率的极性可调超导二极管主要由约瑟夫森结架构组成，该架构通过弱连接耦合两个超导区域。在不使用弱连接结的情况下实现SDE将降低制造复杂度、降低电噪声，并最小化对结质量的依赖。在此，我们报道了在NbSe2中实现的全范德瓦尔斯、高效、无结SDE，该效应由强单轴铁磁体Fe3GeTe2（F3GT）的邻近诱导对称性破缺所促成。在50 mT的小磁场下，实现了高达30%的超导二极管效率。实现了无场二极管整流效应，其二极管极性可通过F3GT自旋极化进行调节。此外，利用SDE的有源场依赖性，演示了双输入异或非（XNOR）逻辑门运算。这些发现凸显了磁邻近效应在实现用于高性能、节能逻辑电路的无结超导二极管方面的潜在应用。
英文摘要
The realization of the superconducting diode effect (SDE), characterized by non-reciprocal supercurrent, is a major step towards dissipationless logic circuits. A polarity-tunable superconducting diode with high diode efficiency primarily consists of Josephson-junction architectures that couple two superconducting regions via a weak link. Realizing an SDE without a weak-link junction would reduce fabrication complexity, lower electrical noise, and minimize dependence on junction quality. Here, we report an all-vdW, highly efficient, junction-free SDE in NbSe2, enabled by proximity-induced symmetry breaking from a strong uniaxial ferromagnet Fe3GeTe2 (F3GT). Superconducting diode efficiency of up to 30% is achieved at a small magnetic field of 50 mT. A field-free diode rectification effect is realized with diode polarity that is tunable by the F3GT spin polarization. Furthermore, by employing the active-field dependence of the SDE, a two-input exclusive-NOR (XNOR) logic gate operation is demonstrated. The findings highlight the potential utilization of magnetic proximity effect towards realizing junction-free superconducting diodes for high-performance, energy-efficient logic circuits.
