发表机构
Paul Scherrer Institute（保罗谢勒研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出一种非破坏性三维掺杂成像技术，利用电荷积分混合像素探测器实现大规模电容-电压剖面分析，以高分辨率成像硅传感器体掺杂分布，揭示掺杂环与异常对性能的影响，为传感器表征和良率优化提供新框架。
AI 中文摘要
硅传感器是X射线和带电粒子的基础探测介质。虽然其体掺杂分布决定了器件性能，但传统上假设其均匀，因为传统剖面分析具有破坏性、空间受限，并且在相关浓度下不敏感。在此，我们介绍一种非破坏性三维掺杂成像技术，该技术将电荷积分混合像素探测器的读出电子器件转变为大规模并行电容-电压剖面仪。在晶圆级面积上以约$10^{11}$ cm$^{-3}$的浓度实现数十微米的三维分辨率，我们对工作传感器的体掺杂浓度进行成像。宏观上，我们解析出随深度演变的同心掺杂环；微观上，我们发现了扭曲局部电场的散布掺杂异常。这些环调制耗尽电压，而异常干扰局部电荷收集，这是先前被忽视的像素良率和性能下降的原因。通过将制造特征与微观缺陷联系起来，该方法为传感器表征和良率优化提供了非破坏性框架。
英文摘要
Silicon sensors are the foundational detection medium for X-rays and charged particles. While their bulk dopant distribution determines device performance, it is conventionally assumed homogeneous because traditional profiling is destructive, spatially restricted, and insensitive at the relevant concentrations. Here we introduce a non-destructive 3D doping imaging technique that turns the readout electronics of a charge-integrating hybrid pixel detector into a massively parallelized capacitance-voltage profiler. With a few tens of micrometres of 3D resolution over wafer-scale areas at concentrations on the order of $10^{11}$ cm$^{-3}$, we image the bulk doping concentration of operational sensors. Macroscopically, we resolve depth-evolving concentric doping rings; microscopically, we uncover scattered doping anomalies that distort local electric fields. The rings modulate the depletion voltage, while the anomalies disrupt local charge collection, a previously overlooked cause of pixel yield and performance degradation. By bridging manufacturing signatures with microscopic defects, this approach provides a non-destructive framework for sensor characterization and yield optimization.
