热生长SiO2扩散阻挡层使Ag-Au-Pd-Pt薄膜的高温研究成为可能

中文摘要 AI 辅助

组合处理平台（CPPs）将Si微尖阵列与组合薄膜合成及原子探针层析技术（APT）相结合，能够在多种加工和反应条件（包括氧化、热相稳定性和电催化反应）下，对成分复杂的固溶体（CCSSs）进行近原子尺度的表征。然而，当CCSS组分（如Pd和Pt）与Si基底反应形成硅化物时，其在高温下的应用可能受到限制。尽管热生长的SiO2已被证明可作为纯Pt与Si之间的有效扩散阻挡层，但其对多组分CCSS薄膜的性能尚不清楚。本研究以Ag-Au-Pd-Pt为模型体系，利用APT和透射电子显微镜，比较了退火过程中25 nm热生长SiO2阻挡层与原生Si氧化物的性能。原生Si氧化物在高达300°C时可防止可检测的界面反应，但在400°C时，Pd和Pt与Si反应，导致硅化物形成及薄膜组分的显著再分布。在600°C时，广泛的基底反应破坏了CCSS薄膜，并产生明显的针状硅化物形貌。相比之下，热生长SiO2在高达600°C时抑制了CCSS薄膜-基底反应，并保持了CCSS成分。因此，热生长SiO2将基于Si的CPPs的可应用温度范围扩展至至少600°C，用于CCSS薄膜的近原子尺度表征。

英文摘要

Combinatorial processing platforms (CPPs), integrating Si microtip arrays with combinatorial thin film synthesis and atom probe tomography (APT), enable near-atomic-scale characterization of compositionally complex solid solutions (CCSSs) under diverse processing and reaction conditions, including oxidation, thermal phase stability and electrocatalytic reactions. Their application at elevated temperatures, however, can be limited when CCSS constituents such as Pd and Pt react with the Si support to form silicides. Although thermally grown SiO2 has proven effective as a diffusion barrier between pure Pt and Si, its performance for multicomponent CCSS thin films is unclear. Here, using Ag-Au-Pd-Pt as a model system, we compare a 25 nm thermally grown SiO2 barrier with native Si oxide during annealing using APT and transmission electron microscopy. Native Si oxide prevents detectable interfacial reactions up to 300°C, but at 400°C Pd and Pt react with Si, causing silicide formation and substantial redistribution of the film constituents. At 600°C, extensive substrate reactions disrupt the CCSS film and produce a pronounced needle-shaped silicide morphology. In contrast, thermally grown SiO2 suppresses CCSS thin film-substrate reactions up to 600°C and retains the CCSS composition. The thermally grown SiO2 thus extends the applicable temperature range of Si-based CPPs to at least 600°C for near-atomic-scale characterization of CCSS thin films.

发表机构

• Ruhr University Bochum（波鸿鲁尔大学）
• Center for Interface-Dominated High-Performance Materials (ZGH)（界面主导高性能材料中心）
• Team Nanotec GmbH（Team Nanotec有限公司）
• Research Center Future Energy Materials and Systems (RC FEMS)（未来能源材料与系统研究中心）

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