面内磁场驱动的ν=3/2处从复合费米子液体到分数量子霍尔态的连续相变
Successive Phase Transitions from a Composite Fermion Liquid to a Fractional Quantum Hall State at ν=3/2 Driven by In-Plane Magnetic Field
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中文总结 AI 辅助
本文报道在超高迁移率GaAs量子阱中，面内磁场诱导ν=3/2偶数分母分数量子霍尔态，经历两次相变，展示通过k空间费米轮廓劈裂工程化拓扑序。
中文摘要 AI 辅助
我们报道了在超高迁移率砷化镓量子阱中，完全由面内磁场B_||诱导的ν=3/2处偶数分母分数量子霍尔态。随着B_||增大，系统经历两次连续相变：首先从复合费米子液体转变为软能隙分数量子霍尔态（B_||~12.2 T），然后通过拓扑相变转变为硬能隙稳健分数量子霍尔态（B_||~14.7 T），并伴随ν=19/13处的子态。我们给出了系统的实验数据，并讨论了解释这些发现的可能方案。我们的工作表明，通过面内磁场下的k空间费米轮廓劈裂，可以工程化拓扑序。
英文摘要
We report an even-denominator fractional quantum Hall state at ν = 3/2 induced entirely by in-plane magnetic field B_|| in an ultra-high-mobility GaAs quantum well. As B_|| increases, the system undergoes two successive transitions: from a composite fermion liquid to a soft-gap FQH state (B_||~12.2 T), then via a topological phase transition to a hard-gap robust FQH state (B_||~14.7 T), accompanied by a daughter state at ν = 19/13. We present systematic data, and discuss a possible scenario in interpreting these findings. Our work demonstrates that topological order may be engineered through k-space Fermi contour splitting under an in-plane magnetic field.
发表机构
- International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料科学中心）
- Department of Electrical Engineering, Princeton University（普林斯顿大学电气工程系）
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