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arXiv 2609.08047physics.app-phcond-mat.mtrl-sciphysics.comp-ph

未掺杂薄膜二极管的电容

Capacitance of Undoped Thin-Film Diodes

Oskar J. Sandberg, Mathias Nyman, Stefan Zeiske, Staffan Dahlstrom, Johannes Benduhn, Ardalan Armin

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中文总结 AI 辅助

本文推导了未掺杂薄膜二极管电容的解析描述,考虑注入载流子与电极电荷效应,提出提取内建电压的方法,并经数值模拟和实验验证。

中文摘要 AI 辅助

基于未掺杂半导体的薄膜二极管的电容由注入的电荷载流子主导,而非掺杂诱导的载流子。然而,这些器件中电容的解析框架仍然难以捉摸。在此,我们推导了电容的解析描述,完全考虑了注入电荷载流子和电极电荷效应。基于这些发现,提出了一种提取这些器件中内建电压的方法。该理论框架通过漂移-扩散模拟在数值上得到证实,并在有机太阳能电池上进行了实验验证。

英文摘要

The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.

发表机构

  • Åbo Akademi University(奥博阿克德米大学)
  • Northwestern University(西北大学)
  • Technische Universität Dresden(德累斯顿工业大学)
  • German Center for Astrophysics(德国天体物理中心)
  • Swansea University(斯旺西大学)

机构由 AI 辅助整理,请以论文原文为准。

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