发表机构
University at Buffalo (SUNY)（布法罗纽约州立大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文采用基于超胞的全带蒙特卡洛方法研究AlGaN合金的高场电子输运，计算不同Al组分下的速度-电场特性、散射机制和瞬态速度过冲，并分析温度影响，为器件设计提供指导。
AI 中文摘要
AlGaN合金是用于下一代功率和射频电子应用的有前景的宽禁带和超宽禁带半导体。为了充分发挥基于AlGaN的器件的潜力，理解电子输运对于准确预测器件性能和确定各种工作条件下的材料极限至关重要。在本工作中，我们使用基于超胞的全带蒙特卡洛方法研究了AlxGa1-xN的高场电子输运性质。采用超胞方法明确捕获合金体系的真实无序性，从而能够更真实地描述载流子输运。计算了不同Al组分下的速度-电场特性，以评估关键输运指标，包括峰值速度、饱和速度和临界电场。详细研究了不同散射机制的作用，以理解AlGaN合金体系中的高场输运机制。除了稳态输运外，还研究了不同Al组分下的瞬态电子动力学，以研究速度过冲行为，这对于提高缩放射频器件的性能尤为重要。最后，研究了超宽禁带Al0.75Ga0.25N中速度-电场特性的温度依赖性，以评估其在高温条件下的输运性能。这些结果提供了对AlGaN合金中高场输运的详细理解，并为基于AlGaN的射频和功率电子器件的设计提供了指导。
英文摘要
AlGaN alloys are promising wide and ultra-wide-bandgap semiconductors for next-generation power and RF electronics applications. To realize the full potential of AlGaN based devices, it is important to understand the electron transport to accurately predict device performance and identify material limits under various operating conditions. In this work, the high-field electron transport properties of AlxGa1-xN are investigated using a supercell based full band Monte Carlo method. The supercell approach is employed to explicitly capture the true disorder of the alloy system, enabling a more realistic description of carrier transport. The velocity field characteristics are calculated across a range of Al compositions to evaluate key transport metrics, including peak velocity, saturation velocity, and critical electric field. The role of different scattering mechanisms is studied in detail to understand the high field transport mechanism in the AlGaN alloy system. In addition to steady state transport, transient electron dynamics are examined for various Al fractions to study velocity-overshoot behavior, which is especially important for improving the performance of scaled RF devices. Finally, the temperature dependence of the velocity field characteristics in ultra-wide-bandgap Al0.75Ga0.25N is investigated to assess its transport performance under high temperature conditions. These results provide a detailed understanding of high-field transport in AlGaN alloys and offer guidance for the design of AlGaN-based RF and power electronic devices.
