金属相Fe$_3$GaTe$_2$实现的界面工程用于自供电高增益WS$_2$光电探测器
Metallic-Phase-Fe$_3$GaTe$_2$ Enabled Interface Engineering for Self-Powered and High-Gain WS$_2$ Photodetectors
- University of Warsaw（华沙大学）
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University（湖南大学材料科学与工程学院光电集成研究所）
- College of Physics and Electronic Engineering, Xinyang Normal University（信阳师范大学物理与电子工程学院）
- School of Science, Minzu University of China（中央民族大学理学院）
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University（北京航空航天大学杭州创新研究院自旋电子学国家重点实验室）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究利用金属相Fe$_3$GaTe$_2$与WS$_2$构建范德华异质结，通过界面工程实现自供电高增益光电探测，在450 nm下获得23.5 A/W零偏压响应度和9.7 x 10$^3$ A/W的高响应度。
AI中文摘要：
二维过渡金属硫族化物具有强的光-物质相互作用，但在光电探测器中存在载流子分离效率低和接触相关损耗的问题。在此，我们展示了一种高增益WS$_2$/Fe$_3$GaTe$_2$范德华异质结构光电探测器，其中金属性Fe$_3$GaTe$_2$作为活性界面接触。功函数失配、界面电荷重新分布以及不对称接触几何共同贡献于内建电场，支持零偏压下的自供电光电探测。在450 nm光照下，器件实现了23.5 A/W的零偏压响应度和6.4 x 10$^3$%的表观外量子效率。在-1 V偏压下，异质结构在450、520和633 nm波长下表现出光响应，在450 nm光照、100 Hz频率下实现了9.7 x 10$^3$ A/W的响应度和2.3 x 10$^13$ Jones的噪声等效比探测率。高光响应归因于界面载流子分离、高效提取以及多层WS$_2$中陷阱辅助光栅效应的可能贡献。这些结果确立了Fe$_3$GaTe$_2$实现的界面工程作为自供电、高灵敏度二维光电探测器的有效途径。
英文摘要：
Two-dimensional transition-metal dichalcogenides offer strong light-matter interaction but suffer from inefficient carrier separation and contact-related losses in photodetectors. Here, we demonstrate a high-gain WS$_2$/Fe$_3$GaTe$_2$ van der Waals heterostructure photodetector, where metallic Fe$_3$GaTe$_2$ serves as an active interfacial contact. The work-function mismatch, together with interfacial charge redistribution and asymmetric contact geometry, contributes to a built-in field that supports self-powered photodetection at zero bias. Under 450 nm illumination, the device delivers a zero-bias responsivity of 23.5 A/W and an apparent external quantum efficiency of 6.4 x 10$^3$%. At -1 V biasing, the heterostructure exhibits photoresponse at 450, 520 and 633 nm, achieving a responsivity of 9.7 x 10$^3$ A/W and a noise derived specific detectivity of 2.3 x 10$^13$ Jones at 100 Hz under 450 nm illumination. The high photoresponse is attributed to interfacial carrier separation, efficient extraction, and a likely contribution from trap-assisted photogating in multilayer WS$_2$. These results establish Fe$_3$GaTe$_2$-enabled interface engineering as an effective route for self-powered, highly sensitive 2D photodetectors.
