发表机构
School of Mathematical Sciences, Fudan University（复旦大学数学科学学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
针对二维中两个严格凸完美导电夹杂物间狭窄区域内的偶极发射器，推导场增强估计，证明远离发射器时增强因子为$\varepsilon^{-1/2}$，并分析发射器位置对最短连线上场的影响。
AI 中文摘要
我们考虑二维中具有$C^{2,\gamma}$边界的两个完美导电夹杂物附近存在偶极型发射器时的场增强问题。我们在狭窄区域内推导出场增强的估计，并证明在远离发射器的区域中场增强因子为$\varepsilon^{-1/2}$。我们构造了一个调和屏障来控制偶极项，而不是使用开尔文变换。我们还研究了发射器的位置如何影响连接两个夹杂物的最短线段上的场。
英文摘要
We consider the field enhancement due to the presence of an emitter of the dipole type near two perfectly conducting inclusions with $C^{2,γ}$ boundaries in two dimensions. We derive estimates of field enhancement in the narrow region and prove that the field is enhanced by a factor $\varepsilon^{-1/2}$ in the region far from the emitter. We construct a harmonic barrier to control the dipole term instead of using the Kelvin transformation. We also study how the location of the emitter affects the field on the shortest line segment connecting two inclusions.
