发表机构
University of Nebraska, Lincoln（内布拉斯加大学林肯分校）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出一种通过静电掺杂二维范德华磁性半导体带边实现纯电场调控拓扑磁性的通用方法，可逆驱动铁磁、斯格明子、螺旋和双半子相变，为拓扑自旋电子学提供新策略。
AI 中文摘要
拓扑磁性的电学调控是实现节能拓扑自旋电子学的核心。然而，大多数电场方法通过低能电子态的非选择性重排来改变相互竞争的磁相互作用，导致磁相控制粗糙，通常需要外部磁场来稳定拓扑准粒子，而少数仅基于电场的方案仅限于特定的导电材料。在此，我们建立了一种纯电场控制拓扑磁性的通用方法，其中施加的电场通过邻近的非磁性范德华（vdW）金属，对二维（2D）范德华磁性半导体的选定轨道角动量极化带边进行静电掺杂。我们表明，由此产生的静电掺杂主要调节二维磁体的磁各向异性，而交换相互作用和Dzyaloshinskii-Moriya相互作用几乎不变，从而可逆地驱动系统通过铁磁、斯格明子、螺旋和双半子相。我们针对CrBr3/石墨烯和Cr2Ge2Te6/TaS2范德华异质结构展示了这一机制，这些结构具有不同轨道特性的电子和空穴口袋。这些结果为拓扑自旋电子学中的纯电场控制建立了一种广泛适用的策略。
英文摘要
Electrical control of topological magnetism is central to realizing energy-efficient topological spintronics. Yet most electric-field approaches modify the competing magnetic interactions through a nonselective rearrangement of low-energy electronic states, yielding coarse magnetic phase control that often requires external magnetic fields to stabilize topological quasiparticles, while few schemes solely based on electric fields are restricted to specific conducting materials. Here, we establish a general approach for purely electric-field control of topological magnetism, in which an applied electric field electrostatically dopes a selected orbital-angular-momentum-polarized band edge of a two-dimensional (2D) van der Waals (vdW) magnetic semiconductor via proximity to an adjacent nonmagnetic vdW metal. We show that the resulting electrostatic doping predominantly tunes magnetic anisotropy of the 2D magnet, while leaving exchange interaction and Dzyaloshinskii-Moriya interaction nearly unchanged, thereby reversibly driving the system through ferromagnetic, skyrmion, spiral, and bimeron phases. We demonstrate this mechanism for CrBr3/graphene and Cr2Ge2Te6/TaS2 vdW heterostructures hosting electron and hole pockets of different orbital characters. These results establish a broadly applicable strategy for purely electric-field control in topological spintronics.
