评估纳米尺度互连材料的输运框架
A Transport Framework for Evaluating Nanoscale Interconnect Materials
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中文总结 AI 辅助
本文提出一个结合热导率、电导率及品质因子的输运框架，评估多种金属薄膜在纳米尺度下的互连性能，发现Ru和Mo因无阻挡层集成优势而成为下一代CMOS互连的有前景候选。
中文摘要 AI 辅助
随着CMOS技术的持续微缩，金属互连因电阻率上升、自热效应和可靠性退化而日益限制电路性能。尽管已提出多种替代金属，但在纳米尺度约束下评估其输运性能的定量框架仍然缺乏。在此，我们通过将独立测量的热导率和电导率与归一化及非归一化输运品质因子相结合，建立了一个输运框架。我们利用对Mo、Co和Ir的新稳态热反射测量数据，以及先前报道的Cu、Ru和W数据，将该框架应用于Cu、Ru、W、Co、Ir和Mo薄膜。虽然Cu表现出最高的本征输运性能，但其有效性能因厚度缩放和Ta衬垫电阻而大幅降低。相比之下，Ru和Mo在保持有利输运性能的同时，能够实现无阻挡层集成，这使它们成为下一代CMOS互连的有前景候选材料。
英文摘要
As CMOS technology continues to scale, metallic interconnects increasingly limit circuit performance through rising resistivity, self-heating, and reliability degradation. Although several alternative metals have been proposed, a quantitative framework for evaluating their transport performance under nanoscale confinement remains unavailable. Here, we establish a transport framework by combining independently measured thermal and electrical conductivities with normalized and unnormalized transport figures of merit. We apply this framework to Cu, Ru, W, Co, Ir, and Mo thin films using new steady-state thermoreflectance measurements of Mo, Co, and Ir together with previously reported Cu, Ru, and W data. While Cu exhibits the highest intrinsic transport performance, its effective performance is substantially reduced by thickness scaling and Ta liner resistance. In contrast, Ru and Mo maintain favorable transport properties while enabling barrierless integration, identifying them as promising candidates for next-generation CMOS interconnects
发表机构
- University of Virginia（弗吉尼亚大学）
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