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用于低能$^{16}$O+$^{16}$O聚变实验的FCVA制备Cr$_2$O$_3$靶的EBS和束内$\gamma$射线研究

EBS and in-beam $γ$-ray investigation of FCVA-prepared Cr$_2$O$_3$ targets for low-energy $^{16}$O+$^{16}$O fusion experiments

C. Wen, X. Chen, L. Wang, Z. An, F. Bai, Y. Chen, X. Fang, Y. X. Fan, B. S. Gao, Z. Y. Guo, J. F. Han, H. T. Hu, W. P. Lin, B. Liao, S. Lin, G. Liu, X. Q. Liu, P. P. Ren, J. Su, J. H. Tan, X. D. Tang, P. Wang, S. Wang, D. H. Xie, N. T. Zhang

arXiv 2609.06148首次发表:更新:

发表机构

Sichuan University; Beijing Normal University; Sun Yat-sen University(四川大学; 北京师范大学; 中山大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究用FCVA制备Cr$_2$O$_3$靶,经EBS和束内$\gamma$谱表征,发现碳杂质诱发本底,但可提取$^{16}$O+$^{16}$O聚变截面,为高纯靶开发提供基础。

AI 中文摘要

采用过滤阴极真空弧(FCVA)沉积技术制备了用于低能$^{16}$O+$^{16}$O聚变实验的Cr$_2$O$_3$固体靶。通过弹性背散射谱(EBS)对其成分、氧面密度和杂质含量进行了表征,并通过束内$\gamma$射线谱学研究了杂质引起的本底贡献。EBS结果表明,Cr$_2$O$_3$薄膜具有良好的化学计量比和均匀性,$^{16}$O面密度范围为$(3.24-3.25)\times10^{17}$ atoms/cm$^2$。EBS分析揭示Cr$_2$O$_3$层中碳原子分数约为1.25-1.29%,同时在Cr衬底表面也检测到大量碳杂质。束内$\gamma$射线谱显示了与$^{27}$Al和$^{24}$Mg相关的显著跃迁,能量为844、1015和1369 keV,主要来源于$^{16}$O辐照下碳杂质诱发的$^{12}$C+$^{16}$O聚变反应。同时,还观察到了$^{16}$O+$^{16}$O反应蒸发道(包括$^{31}$S、$^{31}$P和$^{28}$Si)的特征$\gamma$射线发射,可用于提取$^{16}$O+$^{16}$O聚变截面。本工作为未来低本底$^{16}$O+$^{16}$O聚变截面测量中高纯度氧化物靶的开发和靶构型的优化提供了实验基础。

英文摘要

The Cr$_2$O$_3$ solid target for low-energy $^{16}$O+$^{16}$O fusion experiments was fabricated using filtered cathodic vacuum arc (FCVA) deposition. Its composition, oxygen areal density and impurity content were characterized by elastic backscattering spectrometry (EBS), and the impurity-induced background contributions were investigated by in-beam $γ$-ray spectroscopy. EBS results indicate that the Cr$_2$O$_3$ film exhibits good stoichiometry and uniformity, with $^{16}$O areal densities ranging from $(3.24-3.25)\times10^{17}$ atoms/cm$^2$. The EBS analysis reveals a carbon atomic fraction of approximately 1.25-1.29\% in the Cr$_2$O$_3$ layer, while a large amount of carbon impurities are also identified on the surface of Cr substrate. In-beam $γ$-ray spectra reveal prominent transitions associated with $^{27}$Al and $^{24}$Mg at 844, 1015, and 1369 keV, mainly originating from $^{12}$C+$^{16}$O fusion reactions induced by carbon impurities under $^{16}$O irradiation. Meanwhile, characteristic $γ$-rays emissions from evaporation channels of the $^{16}$O+$^{16}$O reaction, including $^{31}$S, $^{31}$P, and $^{28}$Si, were also observed and can be used to extract the $^{16}$O+$^{16}$O fusion cross sections. This work provides an experimental basis for the development of high-purity oxide targets and the optimization of target configurations for future low-background $^{16}$O+$^{16}$O fusion cross section measurements.

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