超越极性的远程外延
Remote epitaxy beyond polarity
- Pritzker School of Molecular Engineering, University of Chicago（芝加哥大学普里茨克分子工程学院）
- Department of Chemistry, James Franck Institute, University of Chicago（芝加哥大学化学系、詹姆斯·弗兰克研究所）
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute（伦斯勒理工学院材料科学与工程系）
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory（阿贡国家实验室先进光子源部X射线科学分部）
- Center for Nanoscale Materials, Argonne National Laboratory（阿贡国家实验室纳米材料中心）
- Electron Microscopy Core, University of Illinois Chicago（伊利诺伊大学芝加哥分校电子显微镜核心设施）
机构由 AI 辅助整理，请以论文原文为准。
中文总结 AI 辅助
本研究突破远程外延需强离子性衬底的固有认知，证实金属、共价衬底也可实现远程外延，在多材料体系中完成非极性外延实验，拓展了远程外延的适用范围。
中文摘要 AI 辅助
通过覆盖单层二维材料的衬底实现的远程外延，在范德华（vdW）表面建立了晶体学 registry，可实现单晶薄膜的外延生长、剥离与转移。远程外延领域的核心观点认为，促成该现象的衬底必须是强离子性材料，因为共价和金属材料中的原子间静电势波动会被二维材料大幅衰减。本研究表明，当衬底为金属或共价键合材料时，远程外延同样可行，且实验在涵盖金属与半导体的多种材料体系中演示了非极性远程同质与异质外延。所实现的非极性远程相互作用通过利用衬底导电性和邻位面台阶边密度进行设计与调控。这些发现表明远程外延具有普适性，适用于离子、金属及共价材料，拓展了其应用能力，并引发大量关于远程外延机制的新基础科学问题。
英文摘要
Remote epitaxy through a monolayer two-dimensional material-covered substrate establishes a crystallographic registry across the van der Waals (vdW) surface that enables the epitaxial growth, lift-off and transfer of single-crystalline films. A central belief in remote epitaxy is that the substrate facilitating the phenomenon must be a material with strong ionicity, as the interatomic electrostatic potential fluctuation in covalent and metallic materials is substantially attenuated by two-dimensional materials. Here, we show remote epitaxy is possible when the substrate is a metallic or covalently bonded material and experimentally demonstrate non-polar remote homo- and heteroepitaxy across a wide range of material systems, including both metals and semiconductors. The achieved non-polar remote interactions are designed and engineered by harnessing substrate conductivity and vicinal surface step-edge density. These findings indicate that remote epitaxy is universal and applicable to ionic, metallic, and covalent materials, expanding its capabilities and stimulating a plethora of new fundamental scientific questions about the mechanism of remote epitaxy.
