发表机构
The University of Tokyo（东京大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文研究了外延Al/(In,Fe)As异质结的结构与超导特性，明确了Al的生长取向随(In,Fe)As晶格常数的变化规律，发现Al临界磁场的反常下降现象，为相关量子器件的材料设计提供了指导。
AI 中文摘要
超导体/铁磁体异质结是研究界面邻近效应引发的自旋依赖超导现象的多功能平台。本文中，我们研究了通过分子束外延原位生长在应变Fe掺杂铁磁半导体（FMS）(In,Fe)As层上的Al薄膜的结构与超导特性。X射线衍射和透射电子显微镜表明，Al层为单晶外延生长，且随着(In,Fe)As的面内晶格常数增大，Al的生长取向从(110)变为(111)。Al的超导临界温度随薄膜表面形貌和晶粒尺寸系统变化。此外，Al的临界磁场在0.5 K以下出现反常下降，这可能反映了其与下方FMS (In,Fe)As层的磁耦合。这些发现为外延Al/(In,Fe)As异质结的材料设计提供了指导，该异质结有望作为研究半导体基混合量子器件中邻近诱导超导与磁现象的有前景平台。
英文摘要
Superconductor/ferromagnet heterostructures provide a versatile platform for exploring spin-dependent superconducting phenomena arising from interfacial proximity effects. In this article, we investigate the structural and superconducting properties of Al thin films grown in situ by molecular beam epitaxy on strained Fe-doped ferromagnetic semiconductor (FMS) (In,Fe)As layers. X-ray diffraction and transmission electron microscopy reveal the epitaxial growth of single-crystalline Al layers, with the growth orientation changing from (110) to (111) as the in-plane lattice constant of (In,Fe)As increases. The superconducting critical temperature of Al varies systematically with the film surface morphology and grain size. In addition, the critical magnetic field of Al exhibits an anomalous decrease below 0.5 K, possibly reflecting magnetic coupling to the underlying FMS (In,Fe)As layer. These findings provide a guideline for material design of epitaxial Al/(In,Fe)As heterostructures, which may serve as a promising platform for investigating proximity-induced superconducting and magnetic phenomena in semiconductor-based hybrid quantum devices.
