基于成分均匀范德华磁体Fe₃GaTe₂的室温、无磁场、超低功耗自旋轨道转矩逻辑器件演示

中文摘要 AI 辅助

范德华磁体因具有低磁化强度、可灵活堆叠、强可调性及无悬挂键界面等优势，在材料科学和自旋电子学领域受到广泛关注。然而，目前尚无基于范德华磁体的室温无磁场自旋逻辑器件的相关报道。本研究中，我们展示了一种室温、无磁场、低功耗、可扩展的自旋轨道转矩存算一体逻辑器件，该器件利用具有强垂直磁各向异性的范德华磁体Fe₃GaTe₂比特，以及具有强自旋霍尔效应、高电导率和电不对称性的Pt通道。依赖电流脉冲宽度的开关测量显示，该器件的本征无磁场开关临界电流低至1.8×10⁷ A·cm⁻²，热稳定性因子高达50；对于典型工业级器件尺寸，在1 ns脉冲宽度下，其每比特写入功耗可低至1.5 fJ，比工业优化的W/FeCoB器件低40倍。这些结果表明，范德华磁体在高密度、超低功耗、可扩展的存算一体技术中具有巨大潜力。

英文摘要

Van der Waals magnets have received blooming interest in material science and spintronics for the advantages of low magnetization, flexible stacking, strong tunability, and dangling-bond-free interfaces. However, there has been no report of room-temperature magnetic-field-free spin logic device based on a van der Waals magnet. Here, we demonstrate a room-temperature, field-free, low-power, scalable spin-orbit torque in-memory computing logic device utilizing a van der Waals magnet Fe3GaTe2 bit with strong perpendicular magnetic anisotropy and a Pt channel with strong spin Hall effect, high electrical conductivity, and electric asymmetries. Current pulse width-dependent switching measurement reveals a low intrinsic critical magnetic-field-free switching current of 1.8e7 A cm-2, a high thermal stability factor of 50, and the potential of an ultralow write power of 1.5 fJ per bit at 1 ns pulse width for a typical industrial-level device dimensions (40 times lower than the industrially optimized W/FeCoB device). These results suggest a great potential of van der Waals magnets in dense, ultralow-power, scalable in-memory computing technologies.

发表机构

• State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所）
• Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences（中国科学院大学）
• College of Physics and Information Technology, Shaanxi Normal University（陕西师范大学物理与信息工程学院）

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