AI 中文总结
本文通过测试束表征了与Timepix4键合的3D硅传感器，明确了其在不同条件下的时间、空间性能及深度依赖特性，为该传感器的应用提供了关键数据。
AI 中文摘要
本文展示了对一款厚度为300μm的3D硅传感器的测试束研究结果，该传感器通过凸点键合与Timepix4 ASIC相连。针对不同的径迹角度、偏置电压及电荷阈值，研究了该3D传感器的击中探测效率、空间分辨率与时间性能。时间测量已针对Timepix4的时钟频率变化与时间游动进行了校正；空间研究则确定了非线性电荷共享校正方法。在垂直入射条件下，该3D探测器的时间分辨率为245ps，击中探测效率达97%。研究发现，当3D探测器相对于束流方向的角度为8°时，时间分辨率较垂直入射提升6%，击中探测效率超过99%，空间分辨率约为7μm。像素内研究表明，在垂直入射时，电极间的击中在信号电荷最概然值下可实现153ps的时间分辨率，但这些性能最优区域的时间性能会随传感器旋转而下降。通过掠射角入射的径迹，还研究了3D传感器不同深度处的时间特性，揭示了时间分辨率沿传感器深度的依赖关系。
英文摘要
Testbeam results from a $300\,μ\mathrm{m}$-thick 3D silicon sensor bump-bonded to a Timepix4 ASIC, are presented. The hit detection efficiency, spatial resolution, and timing performance of the 3D sensor are studied for several track angles, bias voltages and charge thresholds. The time measurements are corrected for Timepix4 clock-frequency variations and timewalk, while for the spatial studies, nonlinear charge-sharing corrections are determined. At perpendicular incidence, the time resolution of the 3D detector is equal to $245\,\mathrm{ps}$ with a $97\%$ hit detection efficiency. An optimal angle of $8^\circ$ with respect to the beam direction of the 3D detector was found, in which the time resolution improves by $6\%$ compared to normal incidence, while the hit detection efficiency reaches above $99\%$ and the spatial resolution is approximately $7\,μ\mathrm{m}$. Intrapixel studies show that a time resolution of $153\,\mathrm{ps}$ at the most probable value of the signal charge can be achieved for hits between the electrodes at normal incidence, while the timing performance of these best-performing regions deteriorate upon sensor rotation. The timing properties at different depths of the 3D sensor have been investigated with tracks at grazing-angle incidence, revealing a dependence of the time resolution along the sensor depth.
