发表机构
Materials Science Division, Argonne National Laboratory; Racah Institute of Physics, Hebrew University of Jerusalem（阿贡国家实验室材料科学部; 耶路撒冷希伯来大学拉卡物理研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究提出非磁性材料产生反常磁序的莫尔诱导机制，掺杂后打开关联绝缘能隙，莫尔能带呈现两种反常磁分裂，扭转角与应变可调控分裂类型，为非磁性材料的磁性调控提供新途径。
AI 中文摘要
我们提出一种机制，非磁性材料可通过与非磁性衬底的莫尔干涉形成反常磁序，该机制由晶格失配莫尔方格的结构弛豫及莫尔畴壁中的自发扭转驱动。当每个莫尔畴掺杂一个电子时，电子相互作用会打开关联绝缘能隙。根据莫尔势极小值的位置，莫尔能带可呈现d波或g波反常磁分裂；前者可被有限扭转角增强，后者对应变敏感，应变可驱动其向d波转变。
英文摘要
We propose a mechanism for nonmagnetic materials to develop altermagnetic order by moiré interference with nonmagnetic substrate, which is driven by structural relaxation and spontaneous twirls in moiré domain walls of lattice-mismatched moiré square lattices. When doped with one electron per moiré domain, a correlated insulating gap is opened by electron interaction. Depending on the location of the moiré potential minima, the moiré bands can show d-wave or g-wave altermagnetic splitting. The former can be enhanced by a finite twist angle; the latter is sensitive to strains that drive a transition to d-wave.
