发表机构
Université de Montréal（蒙特利尔大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究提出将半无限二维拓扑绝缘体的第一层晶格作为“边链”的假设，结合Shemesh定理，在不破坏手征对称性的绝热演化下计算其受绝热保护的边态与角态，并在多个模型中验证了方法有效性。
AI 中文摘要
我们表明，通过独立于体相考虑第一层晶格位点（即我们所称的“边链”），可以计算半无限二维拓扑绝缘体受绝热保护的边态与角态。我们将该主张作为假设，随后利用Shemesh定理证明，只要限定在不破坏手征对称性的绝热演化范围内，用此方法得到的边态是受绝热保护的。我们在SSH模型的二维扩展SSH3模型、Haldane模型及呼吸 Kagome晶格中给出了该方法的具体实例。
英文摘要
We show that it is possible to compute the adiabatically protected edge and corner states of semi-infinite, two-dimensional, topological insulators by considering the first layer of lattice sites, what we call the "edge chain," independently from the bulk. We start by accepting this claim as an ansatz, then, using the Shemesh theorem, we show that the edge states one finds using our procedure are adiabatically protected, provided we restrict ourselves to adiabatic evolutions that do not break chiral symmetry. We show explicit examples of our method in a 2D extension of the SSH model, the SSH3 model, the Haldane model and the Breathing Kagome Lattice.
