发表机构
ICTP South American Institute for Fundamental Research, Instituto de Física Teórica (IFT–UNESP); Institut de Mathématiques et de Sciences Physiques (IMSP), Université d’Abomey Calavi (UAC); São Paulo State University (UNESP), Instituto de Geociências e Ciências Exatas (IGCE)（ICTP南美基础研究所，理论物理研究所（IFT-UNESP）; 数学与物理科学研究所（IMSP），阿博美卡拉维大学（UAC）; 圣保罗州立大学（UNESP），地球科学与精确科学研究所（IGCE））
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文针对Pickett模型无法捕捉自加热忆阻器电热动力学的问题，提出ATFM模型，经验证可复现等温Pickett动力学，明确关键参数，适用于电路仿真。
AI 中文摘要
自加热将细丝型忆阻器的电状态与热状态耦合在一起。然而，广泛使用的 $TiO_2$ 阻变器件的 Pickett 紧凑模型是等温的，因此无法捕捉由此产生的电热动力学。我们引入了Arrhenius-热细丝模型（ATFM），该模型通过结合动态热平衡和Arrhenius激活的开关速率，扩展了Pickett的隧穿间隙动力学。由此产生的电热反馈产生了急剧的电流门控转变：在临界驱动电流以下，隧穿间隙会发生不可逆的棘轮漂移；而在临界驱动电流以上，细丝动力学的指数锁定建立了有界的、驱动锁定的电热振荡。我们使用频闪庞加莱映射和所得周期-1轨道的弗洛凯乘子，将这种起始表征为类似阈值的轨道收缩，而非经典的局部分岔。在活化能 $E_a\ o0$ 的极限下，ATFM 以数值精度恢复了等温 Pickett 动力学，这通过对振幅、频率和活化能扫描的独立参考实现得到了验证。带有自举置信区间的基于方差的 Sobol' 分析表明，激励振幅是主要控制参数，而热阻 $R_{th}$ 而非热电容 $C_{th}$ 是主要的热贡献因素。与几何相关的温度约束进一步揭示了一个非单调的工作窗口，其中中间的有源区域使开关偏移最大化。预测的轨迹可由全行为SPICE网表和Verilog-A/OSDI器件实现复现，使ATFM可直接用于电路仿真。总体而言，ATFM 在广泛使用的Pickett细丝框架内揭示并实现了自加热驱动的动力学 regime。
英文摘要
Self-heating couples the electrical and thermal states of filamentary memristors. However, the widely used Pickett compact model of $TiO_2$ resistive switching is isothermal and therefore cannot capture the resulting electrothermal dynamics. We introduce the Arrhenius-Thermal Filamentary Model (ATFM), which extends Pickett's tunneling-gap kinetics by incorporating a dynamic heat balance and an Arrhenius-activated switching rate. The resulting electrothermal feedback produces a sharp current-gated transition: below a critical drive current, the tunneling gap undergoes a non-returning ratchet drift, whereas above it, exponential locking of the filament kinetics establishes a bounded, drive-locked electrothermal oscillation. Using a stroboscopic Poincaré map and the Floquet multipliers of the resulting period-$1$ orbit, we characterize this onset as a threshold-like orbit contraction rather than a classical local bifurcation. In the limit $E_a\to0$, ATFM recovers the isothermal Pickett dynamics to numerical precision, as verified against an independent reference implementation over amplitude, frequency, and activation-energy sweeps. A variance-based Sobol' analysis with bootstrap confidence intervals identifies the excitation amplitude as the dominant control parameter and the thermal resistance $R_{th}$, rather than the thermal capacitance $C_{th}$, as the leading thermal contributor. A geometry-dependent temperature constraint further reveals a non-monotonic operating window in which an intermediate active area maximizes the switching excursion. The predicted trajectories are reproduced by both a fully behavioral SPICE netlist and a Verilog-A/OSDI device implementation, making ATFM directly suitable for circuit simulation. Overall, ATFM reveals and realizes a self-heating-driven dynamical regime within the widely used Pickett filamentary framework.
Comments20 pages, 25 figures
