arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~

外场辅助拓扑光刻:在边界之外任意位置创建拓扑态

Topological Lithography via External Field: Creating Topological States Anywhere Beyond the Edge

Haoran Nie, Chaoran Jiang, Xiangying Shen, Lei Xu

arXiv 2609.02670首次发表:更新:

发表机构

The Chinese University of Hong Kong; Shenzhen Campus of Sun Yat-Sen University; Shenzhen Research Institute, The Chinese University of Hong Kong(香港中文大学; 中山大学深圳校区; 香港中文大学(深圳)研究院)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

本研究提出外场辅助拓扑光刻方法,在时间反演对称系统中施加外场可在边界外任意位置诱导可编程拓扑态,经多平台验证,丰富了拓扑态理论与应用

AI 中文摘要

拓扑绝缘体(TIs)以其鲁棒的边界态和非常规相变特性著称,是近几十年最具影响力的发现之一,已在多个领域引发广泛关注。然而,传统拓扑绝缘体需要相邻体区域间存在拓扑对比度,通常通过不同对称性实现,这限制了其灵活性和更广泛的应用。本研究提出一种“光刻”方法,通过在时间反演对称系统中施加外场诱导拓扑态,该态突破了传统体拓扑设计范式,具备出色的可调性:可存在于几何边界、体内部,甚至可远程诱导。由于外场高度可控,诱导的拓扑态具备可编程、可重构的特性,且能轻松定制为所需图案。理论上,研究表明外场会修正Jackiw-Rebbi机制,诱导以局部拓扑标记(LTM)为特征的实空间拓扑相变,进一步建立了扩展的谷体-边界对应关系,可解释传统场景及本研究的发现。该结果在力学、电子学、声学平台均得到验证,凸显了该方法对各类系统的广泛适用性。本研究不仅推进了拓扑学理论,还提升了拓扑态与材料的多样性、可调性及实际可实现性。

英文摘要

Topological insulators (TIs), recognized for their robust boundary states and unconventional phase transitions, have emerged as one of the most impactful discoveries in recent decades, attracting considerable interest across diverse fields. However, conventional TIs require topological contrasts between adjacent bulk regions, typically achieved by distinct symmetries, which limits their flexibility and broader applicability. In this work, we introduce a "lithography" approach to inducing topological states by applying external fields in time-reversal-symmetric systems. These states transcend the conventional bulk topology design paradigm and offer exceptional tunability: they can exist at geometric edges, within the bulk, or even be induced remotely. Because the external field is highly controllable, the induced states are programmable, reconfigurable, and can be easily tailored into desirable patterns. Theoretically, we demonstrate that the external field modifies the Jackiw-Rebbi mechanism, inducing a real-space topological transition characterized by a local topological marker (LTM). We further establish an extended valley bulk-edge correspondence, which explains both the conventional scenario and our findings. Our results, validated across mechanical, electronic, and acoustic platforms, highlight the broad applicability of this approach to various systems. This work not only advances the theory of topology but also enhances the diversity, tunability, and practical implementation of topological states and materials.

论文原文

arXiv 摘要页 · PDF 原文 · HTML 原文

↑