发表机构
Istituto Italiano di Tecnologia; Scuola Normale Superiore; Lawrence Berkeley National Laboratory; National Institute for Materials Science; Università di Pisa; Istituto Nanoscienze - CNR（意大利理工大学; 比萨高等师范学院; 劳伦斯伯克利国家实验室; 国立材料研究所; 比萨大学; 纳米科学研究所-国家研究委员会）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过室温nano-ARPES，在生长-堆叠法制备的近魔角CVD TBG样品中直接观测到平带，其电子能带与剥离法样品可比，畴尺寸适配输运实验，推动CVD石墨烯平带物理研究。
AI 中文摘要
化学气相沉积（CVD）技术的进展已将石墨烯晶体质量提升至前所未有的水平，但仍未知该路线能否实现魔角（MA）扭曲双层石墨烯（TBG）中脆弱的平带及关联态。本研究采用基于铜上石墨烯低压CVD的生长-堆叠协议组装的近MA TBG样品，通过室温纳米角分辨光电子能谱（nano-ARPES）实验观测到了平带。研究表明，其电子能带与机械剥离法制备样品的测量结果完全可比，且确定了最大近MA畴的尺寸与电子输运实验兼容，为CVD石墨烯平带物理的进一步实验提供了动力。
英文摘要
Advances in chemical vapor deposition (CVD) growth have driven graphene crystal quality to unprecedented levels, yet it is still unknown whether this route can realize the fragile flat-band and correlated states of the magic-angle (MA) twisted bilayer graphene (TBG). Here, we report on the experimental observation by room-temperature nano-angle-resolved photoemission spectroscopy (nano-ARPES) of flat bands in a TBG sample close to the MA, assembled via a grow-and-stack protocol based on low-pressure CVD of graphene on copper. Our study indicates electronic bands fully comparable to those measured in exfoliation-based samples and determines the size of the largest near-MA domain to be compatible with electronic transport experiments, motivating further experiments on flat band physics in CVD-graphene.
DOI：10.1021/acs.nanolett.6c01400
