发表机构
RMIT University; Eötvös Loránd University; National Institutes for Quantum Science and Technology (QST); Tohoku University; National Institute for Materials Science（皇家墨尔本理工大学; 罗兰大学; 量子科学技术研究院; 东北大学; 国立材料研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究以六方氮化硼的自旋对缺陷为平台，发现其在20 GPa压力下仍为抗压力量子传感器，且压力诱导相变可产生新型高荧光缺陷，为量子传感与发射器调控提供新途径。
AI 中文摘要
极端压力可改变材料及其特性，但金刚石对顶砧所需的小样品体积与探测要求，使得原位探测极具挑战性。量子缺陷为此类条件下的局域测量提供了途径，然而其传感性能可能受宿主材料的压力诱导变化调控；另一方面，压力也可作为工具，用于设计和稳定具有涌现功能的新型量子缺陷。本研究在基于六方氮化硼（hBN）中光学活性自旋对缺陷的统一平台内，展示了上述两方面特性：作为高压下的稳健量子传感器，这些自旋-1/2系统在高达20 GPa的压力下保持与压力无关的自旋共振，同时维持甚至增强其光发射，这与同材料中的自旋-1硼空位中心形成鲜明对比。同时，研究表明压缩可作为量子缺陷工程的手段：初始hBN发生不可逆相变形成纤锌矿氮化硼（wBN），期间缺陷结构被重新配置；自旋对传感器在该结构转变中持续存在，但根据初始材料不同，在wBN相中还观察到新型高荧光缺陷。这些结果确立了氮化硼中的自旋对缺陷为抗压力量子传感器，同时凸显高压本身作为创建和调控量子发射器的通用途径的价值。
英文摘要
Extreme pressures can transform materials and their properties, but probing these in-situ is made challenging by the small sample volumes and access requirements demanded by diamond anvil cells. Quantum defects offer a route to local measurements under such conditions, yet their sensing performance can be dictated by pressure-induced changes in their own host material. On the other hand, pressure may also be harnessed as a tool to engineer and stabilize new quantum defects with emergent functionalities. Here, we demonstrate both aspects within a unified platform based on optically active spin-pair defects in hexagonal boron nitride (hBN). As robust quantum sensors under pressure, these spin-1/2 systems retain pressure-independent spin resonances up to 20 GPa while maintaining or even enhancing their optical emission, in stark contrast to the spin-1 boron-vacancy centre in the same material. Simultaneously, we show that compression acts as a means of quantum defect engineering: the starting hBN undergoes an irreversible transformation into wurtzite boron nitride (wBN), during which the defect landscape is reconfigured. Spin-pair sensors are seen to persist across this structural transition, however, depending on the starting material we also observe new, highly fluorescent defects in the wBN phase. These results establish spin-pair defects in boron nitride as pressure-resilient quantum sensors while highlighting high pressure itself as a versatile pathway for creating and tuning quantum emitters.
