通过量子振荡理解半导体中的超导邻近效应
Understanding the superconducting proximity effect in semiconductors through quantum oscillations
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中文总结 AI 辅助
本研究通过对覆盖不同金属薄膜的埋入式InAs量子阱的量子振荡分析，确定了超导体下方的载流子参数，揭示了金属对界面子带及量子寿命的影响，为超导体-半导体异质结构提供了关键的正常态参数。
中文摘要 AI 辅助
超导体-半导体异质结构承载着新奇的物质态，为新型量子比特提供了平台，但超导金属分流了电输运，这排除了常规的半导体表征手段，使得异质结构的参数只能靠推测。本研究通过对覆盖Al、Sn、V、Nb、Ta和Re薄膜的埋入式InAs量子阱的舒布尼科夫-德哈斯振荡进行分析，结合考虑分流效应的丁格尔分析，确定了超导体下方的载流子密度、有效质量、g因子、迁移率和子带占据情况。每种金属都会添加一个界面子带，其占据情况分为两类，而埋入式量子阱的有效质量和g因子的变化在10%以内。在由输运迁移率设定的不确定度范围内，没有任何薄膜会缩短埋入式量子阱的量子寿命，且Al和Sn会延长该寿命。量子寿命将界面子带的杂化作用限制在2-4 meV范围内。这些测量提供了隧穿谱会重整但无法测量的正常态参数。
英文摘要
Superconductor-semiconductor hybrids host emergent states of matter and offer a platform for new qubits, but the superconducting metal shunts electrical transport, which rules out conventional semiconductor characterization and leaves the hybrid parameters to speculation. Here we determine density, mass, $g$-factor, mobility and subband occupation beneath the superconductor, from Shubnikov-de Haas oscillations of a buried InAs quantum well under Al, Sn, V, Nb, Ta and Re films, with a Dingle analysis that accounts for the shunt. Every metal adds an interface subband whose occupation falls into one of two classes, whereas the mass and $g$-factor of the buried well are unchanged to within 10\%. Within the uncertainty set by the transport mobility, no film shortens the quantum lifetime of the buried well, and Al and Sn lengthen it. Quantum lifetimes bound the hybridization of the interface subband to 2-4~meV. These measurements supply the normal-state parameters that tunnelling spectroscopy renormalizes but cannot measure.
发表机构
- University of California, Santa Barbara（加州大学圣塔芭芭拉分校）
- University College London（伦敦大学学院）
- University of Oxford（牛津大学）
机构由 AI 辅助整理，请以论文原文为准。
