发表机构
Technical University of Darmstadt; Bielefeld University; Helmholtz-Zentrum Berlin für Materialien und Energie; Walter-Meißner-Institut, Bayerische Akademie der Wissenschaften（达姆施塔特工业大学; 比勒费尔德大学; 柏林亥姆霍兹材料与能源中心; 瓦尔特-梅斯纳研究所，巴伐利亚科学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过电谐波霍尔测量与磁强计技术，结合横截面化学成分映射，探究了不同Gd中间层厚度的Cr/Gd/Co薄膜及其倒置结构的轨道转矩特性，验证了界面混合对转矩效率的影响并发现类场转矩符号随堆叠顺序反转的规律。
AI 中文摘要
我们结合电谐波霍尔测量与磁强计技术，研究了Cr(10nm)/Gd($t_{\text{Gd}}$)/Co(3nm)/TaO$_x$及倒置堆叠结构Co(3nm)/Gd($t_{\text{Gd}}$)/Cr(10nm)中的轨道转矩产生，其中$t_{\text{Gd}}$的范围为0至5 nm。通过横截面化学成分映射，我们对磁强计数据获得了细致的理解。数据显示出随温度变化的磁补偿点，而元素分析提供了显著界面混合的证据，尤其是Gd层与Co层之间的混合。从谐波霍尔数据集中，我们提取了归一化至外加电场的类阻尼（DL）与类场（FL）转矩效率$ξ_{\text{DL}}^{E}$和$ξ_{\text{FL}}^{E}$，并通过两种不同的描述方式解释其对Gd中间层厚度的依赖关系：（i）简单层模型，（ii）考虑界面混合的合金模型。值得注意的是，当反转堆叠顺序时，FL贡献的符号发生改变，而在谐波霍尔测量范围内DL贡献的符号未发生变化。
英文摘要
We studied orbital-torque generation in Cr(10nm)/Gd($t_{\mathrm{Gd}}$)/Co(3nm)/TaO$_x$ and the inverted stack Co(3nm)/Gd($t_{\mathrm{Gd}}$)/Cr(10nm) with $t_{\mathrm{Gd}}$ from 0 to $5\,\mathrm{nm}$ by combining electrical harmonic Hall measurements with magnetometry. A detailed understanding of the magnetometric data is obtained by cross-sectional chemical composition mapping. The data show temperature-dependent magnetic compensation points, while elemental analysis provides evidence of pronounced intermixing, in particular of Gd and Co layers. From the harmonic Hall dataset we extract the damping-like (DL) and field-like (FL) torque efficiencies normalized to the applied electric field, $ξ_{\mathrm{DL}}^{E}$ and $ξ_{\mathrm{FL}}^{E}$, and interpret their dependence on the Gd interlayer thickness using two different descriptions: (i) a naive-layer model and (ii) an alloy model that accounts for interfacial mixing. Notably, upon reversing the stack order, the FL contribution changes sign, whereas the DL contribution does not change sign within the harmonic Hall measurements.
