发表机构
V.Lashkaryov Institute of Semiconductor Physics, NASU（V.拉什科巴罗夫半导体物理研究所，乌克兰国家科学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文综述III族氮化物亚稳态缺陷的相关内容，提出通过生长掺杂控制、电子构型稳定及器件结构设计等措施，提升III族氮化物基器件的性能与可靠性。
AI 中文摘要
III族氮化物（AlN、GaN、InN及其合金）的亚稳态是材料科学、器件物理和外延生长领域的重要研究主题，因为这些化合物存在多种相互竞争的晶体结构、缺陷构型和相行为，会强烈影响材料的光学、电学和力学性能。本文是一篇简洁、结构化的综述性总结，涵盖了主要概念、机制、实验表征、理论方法及器件应用意义。文中探讨了为避免III族氮化物基器件中亚稳态缺陷影响应采取的措施：需通过生长和掺杂控制来阻止亚稳态缺陷形成，通过退火或光激活稳定其电子构型，设计器件结构以最小化电场或温度诱导的转变。这些综合措施可确保GaN、AlGaN和InGaN基器件获得稳定的载流子密度、更高的迁移率以及优异的光学和电学可靠性。
英文摘要
Metastable states in III-nitrides (AlN, GaN, InN and their alloys) are an important topic across materials science, device physics, and epitaxial growth because these compounds exhibit multiple competing crystal structures, defect configurations, and phase behaviors that strongly affect optical, electrical, and mechanical properties. The paper is a concise, structured review-style summary covering the main concepts, mechanisms, experimental signatures, theoretical approaches, and device implications. Actions that should be proposed to avoid effect of metastable defects in III-Nitride based devices are discussed. Avoiding metastable defect effects in III nitride devices requires preventing their formation (through growth and doping control), stabilizing their electronic configuration (by annealing or optical activation), and designing device architectures that minimize field- or temperature induced transitions. These combined actions ensure consistent carrier density, higher mobility, and superior optical and electrical reliability in GaN , AlGaN , and InGaN based devices.
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