AI 中文总结
该研究提出反拓扑态作为拓扑态的对偶，以反高阶拓扑绝缘体为例，在特定双层陈绝缘体中演示其态分布反转特性，确立反拓扑学为拓扑研究新范式。
AI 中文摘要
对偶性是物理学中连接互补对立面（如粒子与空穴）的基本概念。类似地，拓扑绝缘体中的拓扑态定域在边界，但其对偶对应物的存在与性质仍未被探索。本文中，我们引入反拓扑态作为拓扑态的对偶，以反高阶拓扑绝缘体为例。与态定域在角上的高阶拓扑绝缘体不同，反高阶拓扑绝缘体的态沿边分布但角上无，实现了态分布的反转。我们在具有相反陈数的双层陈绝缘体中演示了这一现象，其带反转面包围不同的高对称点。区分这些相的拓扑不变量由带反转面包围的拓扑电荷给出。本工作确立反拓扑学为新范式，开启拓扑研究新篇章。
英文摘要
Duality is a fundamental concept in physics that connects complementary opposites like particles and holes. Similarly, while topological states in topological insulators localize at boundaries, the existence and nature of their dual counterparts remain unexplored. Here, we introduce anti-topological states as the dual of topological states, exemplified by anti-higher-order topological insulators. Unlike higher-order topological insulators, where states localize at corners, anti-higher-order topological insulators host states along edges but absent at corners, realizing an inverted distribution of states. We demonstrate this phenomenon in a bilayer Chern insulator with opposite Chern numbers, where the band inversion surfaces enclose distinct high-symmetry points. The topological invariant distinguishing these phases is given by the topological charges enclosed by band inversion surfaces. This work establishes anti-topology as a new paradigm, opening a chapter in topological research.
Comments6 pages,4 figures
