绝缘体/超导体相变中的全息子区域复杂度
Holographic subregion complexity in insulator/superconductor transition
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中文总结 AI 辅助
该研究在AdS孤子背景下分析了全息子区域复杂度（HSC），发现其可诊断绝缘体/超导体相变，且响应受子系统尺度和纠缠楔拓扑影响，还与全息纠缠熵（HEE）等存在差异。
中文摘要 AI 辅助
我们在AdS孤子背景下研究了完全 backreacted（反作用）的绝缘体/超导体相变过程中的全息子区域复杂度（HSC），并将其与全息纠缠熵（HEE）以及基于复杂度=体积（CV）提议的全息复杂度进行对比。HSC和HEE均能指示二级相变。对于条状子系统，连通与不连通的Ryu-Takayanagi曲面的竞争会产生约束/退约束相变。在超导相且化学势固定时，HSC在临界宽度处出现有限跳变，而HEE保持连续；超过该宽度后，HSC随条状宽度线性增长，HEE则为常数。在条状宽度固定时，对于ℓ<ℓ_c，HSC随化学势先减小后增大，与HEE相反；对于ℓ>ℓ_c，HSC随化学势单调增大。在对各自的绝缘体参考项进行一致归一化和减法后，半空间HSC与CV复杂度密度解析上完全相同。这些结果表明，HSC可用于诊断绝缘体/超导体相变，但其定性响应仍对子系统尺度和纠缠楔拓扑敏感。
英文摘要
We study holographic subregion complexity (HSC) across a fully backreacted insulator/superconductor transition in an AdS-soliton background and compare it with holographic entanglement entropy (HEE) and holographic complexity based on the complexity=volume (CV) proposal. Both HSC and HEE signal the second-order transition. For a strip subsystem, competing connected and disconnected Ryu-Takayanagi surfaces give rise to a confinement/deconfinement transition. At fixed chemical potential in the superconducting phase, HSC exhibits a finite jump at the critical width, whereas HEE remains continuous. Beyond this width, HSC grows linearly with the strip width, while HEE is constant. At fixed strip width, HSC first decreases and then increases with chemical potential for $\ell<\ell_c$, opposite to HEE, but increases monotonically for $\ell>\ell_c$. After consistent normalization and subtraction of the respective insulating references, the half-space HSC and CV complexity densities are analytically identical. These results show that HSC can diagnose the insulator/superconductor transition, but its qualitative response remains sensitive to the subsystem scale and entanglement-wedge topology.
发表机构
- Huaihua University（怀化学院）
- Hunan Institute of Technology（湖南工程学院）
- University of Chinese Academy of Sciences（中国科学院大学）
机构由 AI 辅助整理，请以论文原文为准。
