AI 中文总结
该研究探究硅中M-中心附近的光致发光谱线，发现2.8 meV蓝移谱线为其二激发态，其余谱线或源于其他缺陷或M-中心受扰构型，为量子技术应用提供精细结构信息。
AI 中文摘要
硅中的色心为可扩展量子技术提供了巨大可能性。M-中心被认为起源于碳-氢复合物，具有电信波段发射特性，且拥有与T-中心类似的顺磁基态。在此，我们报告了M-中心附近的光致发光谱线并研究其特性，包括它们对温度、注入注量、注入同位素以及退火温度的依赖性。观测到三条发射谱线，相对于M-中心的761 meV零声子线分别蓝移1.1、2.8和3.6 meV；其中2.8 meV谱线表现出负热猝灭，因此被认为起源于M-中心的第二激发态。其余蓝移发射谱线，加上另外两条红移（4.7和6.4 meV）的发射谱线，表现出正常热猝灭，且不受注入碳原子的同位素偏移（¹²C与¹³C注入）和注入注量的影响。因此，它们可能来自具有相似发射能量的其他缺陷，或来自M-中心的受扰构型。
英文摘要
Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-band emission and a paramagnetic ground state similar to the T-center. Here, we report on photoluminescence lines in the vicinity of the M-center and investigate their properties, including their dependence on temperature, implantation fluence, implantation isotope, and annealing temperature. Three emission lines are observed that are blue-shifted by 1.1, 2.8 and 3.6 meV relative to the 761 meV zero phonon line of the M center, where the 2.8 meV line exhibits negative thermal quenching and is therefore proposed to originate from a second excited state of the M-center. The remaining blue-shifted emission lines, together with two additional red-shifted (4.7 and 6.4 meV) emission lines display normal thermal quenching, and are unaffected by an isotope shift of the implanted carbon atom ($^{12}$C versus $^{13}$C implantation) and implantation fluence. Thus, they likely arise either from other defects with similar emission energies or from a perturbed configuration of the M-center.
