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arXiv 2608.30628cond-mat.mes-hall

用于1.55 μm发射的均匀GaSb基量子点的预测性波长定制

Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um

Markus Peil, Maja Wasiluk, Ziemowit Olinkiewicz, Tymon Przychodni, Robert Matysiak, Teemu Taskinen, Joona Salonen, Abhiroop Chellu, Metin Patli, Joonas Hilska, … 展开作者

Markus Peil, Maja Wasiluk, Ziemowit Olinkiewicz, Tymon Przychodni, Robert Matysiak, Teemu Taskinen, Joona Salonen, Abhiroop Chellu, Metin Patli, Joonas Hilska, Anna Musiał, Michał Gawełczyk, Mircea Guina, Teemu Hakkarainen

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中文总结 AI 辅助

本研究通过调控GaSb基量子点的组分与尺寸,实现了其发射波长从1.48 μm到1.55 μm的定制,验证了该量子点作为可调节电信平台用于长距离光纤网络量子光子应用的潜力。

中文摘要 AI 辅助

本文对通过AlGaSb中液滴蚀刻纳米孔的InGaSb填充形成的GaSb基量子点(QDs)的发射波长定制展开详细研究。研究表明,通过独立改变量子点的组分和尺寸,可将发射波长从1.48 μm调整至电信C波段中心的1.55 μm。更具体地说,光学跃迁能量随量子点材料的In含量呈线性变化,速率为-4.4 meV/In百分比;同时随用于填充纳米孔的材料的单分子层(ML)数量呈线性变化,速率为-2.0 meV/ML。这些实验观测到的能量变化可通过模拟很好地预测,对应的速率分别为-4.3 meV/In百分比和-2.1 meV/ML。模拟中考虑了均匀的In组分、低互混以及微观测量的量子点几何结构。此外,研究证实所有样品均具备出色的量子点 ensemble 均匀性,其前所未有的非均匀展宽远低于7 meV。最后,单量子点的光致发光显示出窄激子发射线,其值为13.8±6.7 μeV,且精细结构分裂值低至<10 μeV。这些结果表明,GaSb基LDE QDs是一种可调节的电信平台,适用于长距离光纤网络上的量子光子应用扩展。

英文摘要

A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission wavelength can be modified from 1.48 um to the center of the telecom C-band at 1.55 mm by independently varying the QD composition and size. More specifically, the optical transition energy shifts linearly as a function of In-content of the QD material at a rate of -4.4 meV/In-percentage, and with the number of monolayers (ML) of material used for filling the nanoholes, at -2.0 meV/ML. These experimentally observed energy shifts are well predicted by simulations yielding rates of -4.3 meV/In-percentage and -2.1 meV/ML, respectively. For the simulation, a uniform In composition, low intermixing, and microscopically measured QD geometry is considered. Additionally, excellent ensemble QD uniformity, with unprecedented inhomogeneous broadening well-below 7 meV across all samples is demonstrated. Finally, photoluminescence of single-QDs reveals narrow excitonic emission lines of 13.8+/-6.7 ueV and low fine-structure splitting values reaching <10 ueV. These results identify GaSb-based LDE QDs as a tunable telecom platform for scaling quantum-photonic applications over long-haul optical fiber networks.

发表机构

  • Optoelectronics Research Centre, Tampere University(坦佩雷大学光电研究中心)
  • Department of Experimental Physics, Wrocław University of Science and Technology(弗罗茨瓦夫科技大学实验物理系)
  • Institute of Theoretical Physics, Wrocław University of Science and Technology(弗罗茨瓦夫科技大学理论物理研究所)

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