AlAsGaSb的折射率温度依赖性
Temperature Dependence of the Refractive Index for AlAsGaSb
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中文总结 AI 辅助
该研究针对GaSb基DBR，在11.5K至300K下测反射率光谱，用TMM结合递归算法提取两种AlGaAsSb合金的温度依赖性折射率，为低温量子发射器用DBR设计提供关键参数。
中文摘要 AI 辅助
分布式布拉格反射镜（DBR）等光子多层结构的精确设计与优化，需要准确掌握材料的光学常数，尤其是折射率的温度依赖性。尽管常用半导体的这些参数已明确，但对于锑化物等新兴材料，相关数据常局限于室温范围，尤其是针对感兴趣的新光谱范围。锑化物化合物，特别是GaSb基合金，在量子光子学应用中极具潜力。本研究中，我们探究了晶格匹配于GaSb、设计用于第三通信窗口工作的DBR。在11.5K至300K的温度范围内测量了反射率光谱，随后采用传输矩阵法（TMM）结合专用递归数值拟合算法进行拟合。初始参数包括通过扫描电子显微镜（SEM）确定的层厚度，以及室温下折射率的文献值。该方法成功提取了两种适用于制备1.5μm波长DBR反射镜的AlGaAsSb合金的温度依赖性折射率。所得结果为可靠的DBR设计提供了关键输入，确保在量子发射器高效工作所需的低温工况下，阻带定位准确且反射率高。
英文摘要
Accurate design and optimization of photonic multilayer structures like distributed Bragg reflectors (DBRs) require precise knowledge of material optical constants, particularly the temperature dependence of the refractive index. While these parameters are well established for widely used semiconductors, for emerging materials such as antimonides they are often limited to room-temperature data, especially for new spectral ranges of interest. Antimonide compounds, in particular GaSb-based alloys, are promising for quantum photonics applications. In this work, we investigated DBRs lattice-matched to GaSb and designed for operation in the third telecommunication window. Reflectivity spectra were measured in the temperature range from 11.5 K to 300 K, and then fitted using the transfer matrix method (TMM), combined with a dedicated recursive numerical fitting algorithm. Initial parameters included layer thicknesses determined by scanning electron microscopy (SEM) and literature values of refractive indices at room temperature. This approach enabled extraction of the temperature-dependent refractive indices of two AlGaAsSb alloys suitable for forming DBR mirrors for 1.5 um wavelengths. The obtained results provide essential input for reliable DBR design, ensuring proper stopband positioning and high reflectivity under cryogenic operating conditions required for efficient quantum emitter performance.
发表机构
- Wrocław University od Science and Technology（弗罗茨瓦夫科技大学）
- Tampere Institute for Advanced Study, Tampere University（坦佩雷大学高等研究院）
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