发表机构
Institute for Solid State Physics, The University of Tokyo; Department of Physics, Institute of Science Tokyo; Research Center for Electronic and Optical Materials, National Institute for Materials Science; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science; Center for Emergent Matter Science, RIKEN; Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo（东京大学固体物质研究所; 东京科学大学物理系; 国家材料研究所电子与光学材料研究中心; 国家材料研究所材料纳米结构研究中心; 理化学研究所新兴物质科学中心; 东京大学量子相电子中心及应用物理系）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
研究构建石墨烯与CuCrP₂S₆的范德华异质结构，实现栅极可切换磁电输运，揭示磁电效应，为二维范德华功能器件设计提供了途径。
AI 中文摘要
原子级界面处输运性质的电与磁调控是下一代电子学和自旋电子学发展的核心。范德华多铁性材料可在单层极限下同时具有铁电和磁有序，为这类界面调控提供了极具前景的平台，但利用范德华多铁性材料独特属性实现电子功能的研究在很大程度上仍未取得突破。本研究构建了包含石墨烯与多铁性材料CuCrP₂S₆的范德华异质结构，实现了由多铁层介导的石墨烯中栅极可切换磁电输运。石墨烯的电荷中性电阻峰表现出由多铁态极化翻转引起的显著磁滞；施加面内磁场时，该峰以极化依赖的方式发生位移，揭示了磁场诱导的极化调制，这是磁电效应的直接特征。此外，在施加电场下冷却器件可实现多铁有序的畴控制，允许界面磁电输运的可逆切换。这些结果首次展示了范德华异质结构中的界面磁电输运，为设计用于功能器件的二维范德华界面建立了途径。
英文摘要
Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.
